Novel room temperature multiferroics for random access memory elements

IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control

Volumn 57, Issue 10, 2010, Pages 2237-2242

  Kumar, Ashok ^a   Katiyar, Ram S ^a   Scott, James F ^b  

^a UNIVERSITY OF PUERTO RICO   (Puerto Rico)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL SOLUTION DEPOSITION; FERROELECTRIC ORDERING; MAGNETIC FIELD STRENGTHS; MULTIFERROICS; POLYCRYSTALLINE; PZT; RANDOM ACCESS MEMORIES; RELAXORS; ROOM TEMPERATURE;

FERROELECTRIC MATERIALS; MAGNETIC FIELDS; MAGNETOSTRICTION; MANGANESE OXIDE; POLARIZATION; PULSED LASER DEPOSITION; RANDOM ACCESS STORAGE; TERBIUM;

FERROELECTRICITY;

EID: 77957710348     PISSN: 08853010     EISSN: None     Source Type: Journal    
DOI: 10.1109/TUFFC.2010.1684     Document Type: Conference Paper

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