Etch Mechanism and Temperature Regimes of an Atmospheric Pressure Chlorine-Based Plasma Jet Process

Plasma Processes and Polymers

Volumn 13, Issue 11, 2016, Pages 1126-1133

  Piechulla, Peter ^a   Bauer, Jens ^b   Boehm, Georg ^b   Paetzelt, Hendrik ^b   Arnold, Thomas ^b  

^a MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

^b LEIBNIZ INSTITUTE OF SURFACE ENGINEERING IOM   (Germany)

Author keywords

atmospheric plasma jet; chlorine plasma; plasma etching; silicon

Indexed keywords

ATMOSPHERIC CHEMISTRY; ATMOSPHERIC PRESSURE; ATMOSPHERIC TEMPERATURE; CHLORINE; PLASMA ETCHING; PLASMA JETS; SILICON; SURFACE REACTIONS; SURFACE TREATMENT;

ATMOSPHERIC PLASMAS; CHLORINE-BASED PLASMA; MATERIAL REMOVAL; OXIDE LAYER FORMATIONS; REACTIVE COMPONENTS; SILICON SURFACES; SUBSTRATE SURFACE TEMPERATURE; TEMPERATURE REGIMES;

FIGHTER AIRCRAFT;

EID: 84978196904     PISSN: 16128850     EISSN: 16128869     Source Type: Journal    
DOI: 10.1002/ppap.201600071     Document Type: Article

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