Wafer-Scale Microwire Transistor Array Fabricated via Evaporative Assembly

ACS Applied Materials and Interfaces

Volumn 8, Issue 24, 2016, Pages 15543-15550

  Park, Jae Hoon ^a   Sun, Qijun ^a,c   Choi, Yongsuk ^a   Lee, Seungwoo ^a,b   Lee, Dong Yun ^d   Kim, Yong Hoon ^a,b   Cho, Jeong Ho ^a,b  

^a Sungkyunkwan University   (South Korea)

^b Sungkyunkwan University   (South Korea)

^c NATIONAL CENTER FOR NANOSCIENCE AND TECHNOLOGY   (China)

^d Kyungpook National University   (South Korea)

Author keywords

blade coating; metal oxide semiconductor; microwire transistor; plasma induced metallization

Indexed keywords

CAPACITANCE; FIELD EFFECT TRANSISTORS; FLEXIBLE ELECTRONICS; GATE DIELECTRICS; METALS; MOS DEVICES; OXIDE SEMICONDUCTORS; SEMICONDUCTING INDIUM; SILICON WAFERS; THRESHOLD VOLTAGE; TRANSISTORS;

BLADE COATINGS; FABRICATION TECHNIQUE; INDIUM GALLIUM ZINC OXIDES; INORGANIC SEMICONDUCTORS; LARGE-AREA ELECTRONICS; METAL OXIDE SEMICONDUCTOR; MICROWIRE; PLASMA-INDUCED;

FABRICATION;

EID: 84976260688     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/acsami.6b04340     Document Type: Article

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