-
1
-
-
84973884601
-
Spin logic devices
-
in, edited by E. Tsymbal and I. Žutić (CRC Press, New York), pp..
-
H. Dery, Spin logic devices, in Handbook of Spin Transport and Magnetism, edited by E. Tsymbal and I. Žutić (CRC Press, New York, 2012), pp. 747-762.
-
(2012)
Handbook of Spin Transport and Magnetism
, pp. 747-762
-
-
Dery, H.1
-
2
-
-
0002902816
-
Properties of a 2D electron gas with a lifted spectrum degeneracy
-
Y. A. Bychkov and E. I. Rashba, Properties of a 2D electron gas with a lifted spectrum degeneracy, Sov. Phys. JETP Lett. 39, 78 (1984).
-
(1984)
Sov. Phys. JETP Lett.
, vol.39
, pp. 78
-
-
Bychkov, Y.A.1
Rashba, E.I.2
-
3
-
-
0001624546
-
Spin Relaxation in GaAs(110) Quantum Wells
-
Y. Ohno, R. Terauchi, T. Adachi, F. Matsukura, and H. Ohno, Spin Relaxation in GaAs(110) Quantum Wells, Phys. Rev. Lett. 83, 4196 (1999). PRLTAO 0031-9007 10.1103/PhysRevLett.83.4196
-
(1999)
Phys. Rev. Lett.
, vol.83
, pp. 4196
-
-
Ohno, Y.1
Terauchi, R.2
Adachi, T.3
Matsukura, F.4
Ohno, H.5
-
4
-
-
19644400946
-
Anomalous Spin Dephasing in (110) GaAs Quantum Wells: Anisotropy and Intersubband Effects
-
S. Döhrmann, D. Hägele, J. Rudolph, M. Bichler, D. Schuh, and M. Oestreich, Anomalous Spin Dephasing in (110) GaAs Quantum Wells: Anisotropy and Intersubband Effects, Phys. Rev. Lett. 93, 147405 (2004). PRLTAO 0031-9007 10.1103/PhysRevLett.93.147405
-
(2004)
Phys. Rev. Lett.
, vol.93
, pp. 147405
-
-
Döhrmann, S.1
Hägele, D.2
Rudolph, J.3
Bichler, M.4
Schuh, D.5
Oestreich, M.6
-
5
-
-
33846534819
-
Anisotropic Spin Transport in (110) GaAs Quantum Wells
-
O. D. D. Couto, F. Iikawa, J. Rudolph, R. Hey, and P. V. Santos, Anisotropic Spin Transport in (110) GaAs Quantum Wells, Phys. Rev. Lett. 98, 036603 (2007). PRLTAO 0031-9007 10.1103/PhysRevLett.98.036603
-
(2007)
Phys. Rev. Lett.
, vol.98
, pp. 036603
-
-
Couto, O.D.D.1
Iikawa, F.2
Rudolph, J.3
Hey, R.4
Santos, P.V.5
-
6
-
-
56249129279
-
Spin Noise Spectroscopy in GaAs (110) Quantum Wells: Access to Intrinsic Spin Lifetimes and Equilibrium Electron Dynamics
-
G. M. Müller, M. Römer, D. Schuh, W. Wegscheider, J. Hübner, and M. Oestreich, Spin Noise Spectroscopy in GaAs (110) Quantum Wells: Access to Intrinsic Spin Lifetimes and Equilibrium Electron Dynamics, Phys. Rev. Lett. 101, 206601 (2008). PRLTAO 0031-9007 10.1103/PhysRevLett.101.206601
-
(2008)
Phys. Rev. Lett.
, vol.101
, pp. 206601
-
-
Müller, G.M.1
Römer, M.2
Schuh, D.3
Wegscheider, W.4
Hübner, J.5
Oestreich, M.6
-
7
-
-
4243343522
-
Spin-orbit coupling effects in zinc blende structures
-
G. Dresselhaus, Spin-orbit coupling effects in zinc blende structures, Phys. Rev. 100, 580 (1955). PHRVAO 0031-899X 10.1103/PhysRev.100.580
-
(1955)
Phys. Rev.
, vol.100
, pp. 580
-
-
Dresselhaus, G.1
-
8
-
-
84952334089
-
Symmetry, distorted band structure, and spin-orbit coupling of group-III metal-monochalcogenide monolayers
-
P. Li and I. Appelbaum, Symmetry, distorted band structure, and spin-orbit coupling of group-III metal-monochalcogenide monolayers, Phys. Rev. B 92, 195129 (2015). PRBMDO 1098-0121 10.1103/PhysRevB.92.195129
-
(2015)
Phys. Rev. B
, vol.92
, pp. 195129
-
-
Li, P.1
Appelbaum, I.2
-
9
-
-
0001103704
-
Spin relaxation of conduction electrons in noncentrosymmetric semiconductors
-
M. Dyakonov and V. Perel, Spin relaxation of conduction electrons in noncentrosymmetric semiconductors, Sov. Phys. Solid State 13, 3023 (1972). SPSSA7 0038-5654
-
(1972)
Sov. Phys. Solid State
, vol.13
, pp. 3023
-
-
Dyakonov, M.1
Perel, V.2
-
10
-
-
77956031280
-
A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction
-
S. Ikeda, K. Miura, H. Yamamoto, K. Mizunuma, H. D. Gan, M. Endo, S. Kanai, J. Hayakawa, F. Matsukura, and H. Ohno, A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction, Nat. Mater. 9, 721 (2010). NMAACR 1476-1122 10.1038/nmat2804
-
(2010)
Nat. Mater.
, vol.9
, pp. 721
-
-
Ikeda, S.1
Miura, K.2
Yamamoto, H.3
Mizunuma, K.4
Gan, H.D.5
Endo, M.6
Kanai, S.7
Hayakawa, J.8
Matsukura, F.9
Ohno, H.10
-
11
-
-
36549102400
-
Perpendicular magnetic anisotropy in (Equation presented) and (Equation presented) thin-film layered structures
-
P. F. Carcia, Perpendicular magnetic anisotropy in (Equation presented) and (Equation presented) thin-film layered structures, J. Appl. Phys. 63, 5066 (1988); JAPIAU 0021-8979 10.1063/1.340404
-
(1988)
J. Appl. Phys.
, vol.63
, pp. 5066
-
-
Carcia, P.F.1
-
12
-
-
0000248301
-
Prediction and Confirmation of Perpendicular Magnetic Anisotropy in (Equation presented) Multilayers
-
G. H. O. Daalderop, P. J. Kelly, and F. J. A. den Broeder, Prediction and Confirmation of Perpendicular Magnetic Anisotropy in (Equation presented) Multilayers, Phys. Rev. Lett. 68, 682 (1992). PRLTAO 0031-9007 10.1103/PhysRevLett.68.682
-
(1992)
Phys. Rev. Lett.
, vol.68
, pp. 682
-
-
Daalderop, G.H.O.1
Kelly, P.J.2
Den Broeder, F.J.A.3
-
13
-
-
55549085840
-
Giant spin-accumulation signal and pure spin-current-induced reversible magnetization switching
-
T. Yang, T. Kimura, and Y. Otani, Giant spin-accumulation signal and pure spin-current-induced reversible magnetization switching, Nat. Phys. 4, 851 (2008). NPAHAX 1745-2473 10.1038/nphys1095
-
(2008)
Nat. Phys.
, vol.4
, pp. 851
-
-
Yang, T.1
Kimura, T.2
Otani, Y.3
-
14
-
-
44949249735
-
Valley-dependent optoelectronics from inversion symmetry breaking
-
W. Yao, D. Xiao, and Q. Niu, Valley-dependent optoelectronics from inversion symmetry breaking, Phys. Rev. B 77, 235406 (2008); PRBMDO 1098-0121 10.1103/PhysRevB.77.235406
-
(2008)
Phys. Rev. B
, vol.77
, pp. 235406
-
-
Yao, W.1
Xiao, D.2
Niu, Q.3
-
15
-
-
84860752361
-
Coupled Spin and Valley Physics in Monolayers of (Equation presented) and Other Group-VI Dichalcogenides
-
D. Xiao, G.-B. Liu, W. Feng, X. Xu, and W. Yao, Coupled Spin and Valley Physics in Monolayers of (Equation presented) and Other Group-VI Dichalcogenides, Phys. Rev. Lett. 108, 196802 (2012). PRLTAO 0031-9007 10.1103/PhysRevLett.108.196802
-
(2012)
Phys. Rev. Lett.
, vol.108
, pp. 196802
-
-
Xiao, D.1
Liu, G.-B.2
Feng, W.3
Xu, X.4
Yao, W.5
-
16
-
-
84880125373
-
Transport Theory of Monolayer Transition-Metal Dichalcogenides through Symmetry
-
Y. Song and H. Dery, Transport Theory of Monolayer Transition-Metal Dichalcogenides through Symmetry, Phys. Rev. Lett. 111, 026601 (2013). PRLTAO 0031-9007 10.1103/PhysRevLett.111.026601
-
(2013)
Phys. Rev. Lett.
, vol.111
, pp. 026601
-
-
Song, Y.1
Dery, H.2
-
17
-
-
84884832517
-
Anisotropic intrinsic spin relaxation in graphene due to flexural distortions
-
S. Fratini, D. Gosálbez-Martínez, P. Merodio Cámara, and J. Fernández-Rossier, Anisotropic intrinsic spin relaxation in graphene due to flexural distortions, Phys. Rev. B 88, 115426 (2013). PRBMDO 1098-0121 10.1103/PhysRevB.88.115426
-
(2013)
Phys. Rev. B
, vol.88
, pp. 115426
-
-
Fratini, S.1
Gosálbez-Martínez, D.2
Merodio Cámara, P.3
Fernández-Rossier, J.4
-
18
-
-
84911449313
-
Graphene spintronics
-
W. Han, R. K. Kawakami, M. Gmitra, and J. Fabian, Graphene spintronics, Nat. Nanotechnol. 9, 794 (2014). NNAABX 1748-3387 10.1038/nnano.2014.214
-
(2014)
Nat. Nanotechnol.
, vol.9
, pp. 794
-
-
Han, W.1
Kawakami, R.K.2
Gmitra, M.3
Fabian, J.4
-
19
-
-
84987063125
-
Lattice dynamics of gallium selenide in the one-layer approach
-
V. K. Bashenov, I. Baumann, and D. I. Marvakov, Lattice dynamics of gallium selenide in the one-layer approach, Phys. Status Solidi (b) 89, K115 (1978); PSSBBD 0370-1972 10.1002/pssb.2220890246
-
(1978)
Phys. Status Solidi (B)
, vol.89
, pp. K115
-
-
Bashenov, V.K.1
Baumann, I.2
Marvakov, D.I.3
-
20
-
-
0018999956
-
Lattice dynamics and elastic properties of GaSe
-
V. Y. Altshul, V. K. Bashenov, D. I. Marvakov, and A. Petukhov, Lattice dynamics and elastic properties of GaSe, Phys. Status Solidi (b) 98, 715 (1980). PSSBBD 0370-1972 10.1002/pssb.2220980237
-
(1980)
Phys. Status Solidi (B)
, vol.98
, pp. 715
-
-
Altshul, V.Y.1
Bashenov, V.K.2
Marvakov, D.I.3
Petukhov, A.4
-
21
-
-
84863670508
-
GaS and GaSe ultrathin layer transistors
-
D. J. Late, B. Liu, J. Luo, A. Yan, H. S. S. R. Matte, M. Grayson, C. N. R. Rao, and V. P. Dravid, GaS and GaSe ultrathin layer transistors, Adv. Mater. 24, 3549 (2012). ADVMEW 0935-9648 10.1002/adma.201201361
-
(2012)
Adv. Mater.
, vol.24
, pp. 3549
-
-
Late, D.J.1
Liu, B.2
Luo, J.3
Yan, A.4
Matte, H.S.S.R.5
Grayson, M.6
Rao, C.N.R.7
Dravid, V.P.8
-
22
-
-
85027922386
-
High broad-band photoresponsivity of mechanically formed InSe-graphene van der Waals heterostructures
-
G. W. Mudd, S. A. Svatek, L. Hague, O. Makarovsky, Z. R. Kudrynskyi, C. J. Mellor, P. H. Beton, L. Eaves, K. S. Novoselov, Z. D. Kovalyuk, E. E. Vdovin, A. J. Marsden, N. R. Wilson, and A. Patanè, High broad-band photoresponsivity of mechanically formed InSe-graphene van der Waals heterostructures, Adv. Mater. 27, 3760 (2015); ADVMEW 0935-9648 10.1002/adma.201500889
-
(2015)
Adv. Mater.
, vol.27
, pp. 3760
-
-
Mudd, G.W.1
Svatek, S.A.2
Hague, L.3
Makarovsky, O.4
Kudrynskyi, Z.R.5
Mellor, C.J.6
Beton, P.H.7
Eaves, L.8
Novoselov, K.S.9
Kovalyuk, Z.D.10
Vdovin, E.E.11
Marsden, A.J.12
Wilson, N.R.13
Patanè, A.14
-
23
-
-
84935873721
-
Intrinsic electron mobility exceeding (Equation presented) in multilayer InSe FETs
-
S. Sucharitakul, N. J. Goble, U. R. Kumar, R. Sankar, Z. A. Bogorad, F.-C. Chou, Y.-T. Chen, and X. P. A. Gao, Intrinsic electron mobility exceeding (Equation presented) in multilayer InSe FETs, Nano Lett. 15, 3815 (2015). NALEFD 1530-6984 10.1021/acs.nanolett.5b00493
-
(2015)
Nano Lett.
, vol.15
, pp. 3815
-
-
Sucharitakul, S.1
Goble, N.J.2
Kumar, U.R.3
Sankar, R.4
Bogorad, Z.A.5
Chou, F.-C.6
Chen, Y.-T.7
Gao, X.P.A.8
-
24
-
-
84903631697
-
Controlled vapor phase growth of single crystalline, two-dimensional GaSe crystals with high photoresponse
-
X. Li, M.-W. Lin, A. A. Puretzky, J. C. Idrobo, C. Ma, M. Chi, M. Yoon, C. M. Rouleau, I. I. Kravchenko, D. B. Geohegan, and K. Xiao, Controlled vapor phase growth of single crystalline, two-dimensional GaSe crystals with high photoresponse, Sci. Rep. 4, 5497 (2014). SRCEC3 2045-2322
-
(2014)
Sci. Rep.
, vol.4
, pp. 5497
-
-
Li, X.1
Lin, M.-W.2
Puretzky, A.A.3
Idrobo, J.C.4
Ma, C.5
Chi, M.6
Yoon, M.7
Rouleau, C.M.8
Kravchenko, I.I.9
Geohegan, D.B.10
Xiao, K.11
-
25
-
-
0000156870
-
Spin relaxation of electrons due to scattering by holes
-
G. L. Bir, A. G. Aronov, and G. E. Pikus, Spin relaxation of electrons due to scattering by holes, Sov. Phys. JETP 42, 705 (1976). SPHJAR 0038-5646
-
(1976)
Sov. Phys. JETP
, vol.42
, pp. 705
-
-
Bir, G.L.1
Aronov, A.G.2
Pikus, G.E.3
-
26
-
-
0001599577
-
Relativistic band structure and spin-orbit splitting of zinc-blende-type semiconductors
-
M. Cardona, N. E. Christensen, and G. Fasol, Relativistic band structure and spin-orbit splitting of zinc-blende-type semiconductors, Phys. Rev. B 38, 1806 (1988). PRBMDO 0163-1829 10.1103/PhysRevB.38.1806
-
(1988)
Phys. Rev. B
, vol.38
, pp. 1806
-
-
Cardona, M.1
Christensen, N.E.2
Fasol, G.3
-
27
-
-
0031333325
-
Accurate determination of ultrathin gate oxide thickness and effective polysilicon doping of CMOS devices
-
A. Gupta, P. Fang, M. Song, M.-R. Lin, D. Wollesen, K. Chen, and C. Hu, Accurate determination of ultrathin gate oxide thickness and effective polysilicon doping of CMOS devices, IEEE Electron Device Lett. 18, 580 (1997). EDLEDZ 0741-3106 10.1109/55.644077
-
(1997)
IEEE Electron Device Lett.
, vol.18
, pp. 580
-
-
Gupta, A.1
Fang, P.2
Song, M.3
Lin, M.-R.4
Wollesen, D.5
Chen, K.6
Hu, C.7
-
28
-
-
0000520009
-
Electronic structure of GaSe, GaS, InSe, and GaTe
-
J. Robertson, Electronic structure of GaSe, GaS, InSe, and GaTe, J. Phys. C 12, 4777 (1979). JPSOAW 0022-3719 10.1088/0022-3719/12/22/019
-
(1979)
J. Phys. C
, vol.12
, pp. 4777
-
-
Robertson, J.1
-
29
-
-
0037088249
-
Electronic structure of the layer compounds GaSe and InSe in a tight-binding approach
-
M. O. D. Camara, A. Mauger, and I. Devos, Electronic structure of the layer compounds GaSe and InSe in a tight-binding approach, Phys. Rev. B 65, 125206 (2002). PRBMDO 0163-1829 10.1103/PhysRevB.65.125206
-
(2002)
Phys. Rev. B
, vol.65
, pp. 125206
-
-
Camara, M.O.D.1
Mauger, A.2
Devos, I.3
-
30
-
-
33746065849
-
Spin-orbit splitting in crystalline and compositionally disordered semiconductors
-
D. J. Chadi, Spin-orbit splitting in crystalline and compositionally disordered semiconductors, Phys. Rev. B 16, 790 (1977). PLRBAQ 0556-2805 10.1103/PhysRevB.16.790
-
(1977)
Phys. Rev. B
, vol.16
, pp. 790
-
-
Chadi, D.J.1
-
31
-
-
84916226120
-
Transition from parabolic to ring-shaped valence band maximum in few-layer GaS, GaSe, and InSe
-
D. V. Rybkovskiy, A. V. Osadchy, and E. D. Obraztsova, Transition from parabolic to ring-shaped valence band maximum in few-layer GaS, GaSe, and InSe, Phys. Rev. B 90, 235302 (2014). PRBMDO 1098-0121 10.1103/PhysRevB.90.235302
-
(2014)
Phys. Rev. B
, vol.90
, pp. 235302
-
-
Rybkovskiy, D.V.1
Osadchy, A.V.2
Obraztsova, E.D.3
-
32
-
-
84973884283
-
-
See Supplemental Material at for an AVI animation of spin evolution shown in Fig. 3.
-
See Supplemental Material at http://link.aps.org/supplemental/10.1103/PhysRevApplied.5.054007 for an AVI animation of spin evolution shown in Fig. 3.
-
-
-
-
33
-
-
42149195052
-
Oblique Hanle effect in semiconductor spin transport devices
-
J. Li, B. Huang, and I. Appelbaum, Oblique Hanle effect in semiconductor spin transport devices, Appl. Phys. Lett. 92, 142507 (2008); APPLAB 0003-6951 10.1063/1.2907497
-
(2008)
Appl. Phys. Lett.
, vol.92
, pp. 142507
-
-
Li, J.1
Huang, B.2
Appelbaum, I.3
-
34
-
-
54949097344
-
Geometric dephasing-limited Hanle effect in long-distance lateral silicon spin transport devices
-
B. Huang, H.-J. Jang, and I. Appelbaum, Geometric dephasing-limited Hanle effect in long-distance lateral silicon spin transport devices, Appl. Phys. Lett. 93, 162508 (2008). APPLAB 0003-6951 10.1063/1.3006333
-
(2008)
Appl. Phys. Lett.
, vol.93
, pp. 162508
-
-
Huang, B.1
Jang, H.-J.2
Appelbaum, I.3
-
35
-
-
78049265764
-
Gauge fields in graphene
-
M. Vozmediano, M. Katsnelson, and F. Guinea, Gauge fields in graphene, Phys. Rep. 496, 109 (2010). PRPLCM 0370-1573 10.1016/j.physrep.2010.07.003
-
(2010)
Phys. Rep.
, vol.496
, pp. 109
-
-
Vozmediano, M.1
Katsnelson, M.2
Guinea, F.3
|