Gate leakage current: A sensitive characterization parameter for plasmainduced damage detection in ultrathin oxide submicron transistors

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 3, 1998, Pages 1664-1669

  Jiang, J ^a   Awadelkarim, O O ^a   Werking, J ^b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON-DOPED SILICON; CHARGE PUMPING CURRENT; CHARGING DAMAGE; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; DAMAGE INDICATOR; DIRECT TUNNELING; GATE OXIDE; GATE-LEAKAGE CURRENT; MAXIMUM TRANSCONDUCTANCE; METAL ETCH; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOSFET STRUCTURES; MOSFETS; OXIDE THICKNESS; PLASMA-INDUCED DAMAGE; POLYCRYSTALLINE SILICON GATES; SUBMICRON; SUBSTRATE VOLTAGE; SUBTHRESHOLD SWING; THIN OXIDES; ULTRA THIN GATE OXIDE; ULTRA-THIN OXIDE;

BORON; DIELECTRIC DEVICES; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GATES (TRANSISTOR); LEAKAGE CURRENTS; METALS; MOS DEVICES; MOSFET DEVICES; POLYSILICON; SEMICONDUCTING SILICON; SUBSTRATES;

DAMAGE DETECTION;

EID: 75149124711     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581139     Document Type: Article

References (15)

1. T. Gu, M. Okandan, O. O. Awadelkarim, S. J. Fonash, J. F. Rembetski, P. Aum, and Y. D. Chan, IEEE Electron Device Lett. 15, 48 (1994).
2. T. Gu, O. O. Awadelkarim, S. J. Fonash, and Y. D. Chan, IEEE Electron. Device Lett. 15, 396 (1994).
3. S. Fang and J. McVittie, IEEE Electron Device Lett. 13, 288 (1992).
4. S. J. Fonash, J. Electrochem. Soc. 137, 3885 (1990).
5. H. Shin, N. Jha, X. Qian, G. Hills, and C. Hu, Solid State Technol. 36, 29 (1993).
6. H. Shin and C. Hu, Semicond. Sci. Technol. 11, 463 (1996).
7. J. Maserijian and N. Zamani, J. Appl. Phys. 53, 559 (1982).
8. G. W. Yoon, A. B. Joshi, J. Kim, and D.-L. Kwong, IEEE Electron Device Lett. EDL-14, 231 (1993).
9. SEMATECH Technology Transfer 132 AZ module list (1995).
10. O. O. Awaldelkarim, S. J. Fonash, P. I. Mikulan, and Y. D. Chan, J. Appl. Phys. 79, 517 (1996).
11. D. J. DiMaria, T. N. Thesis, J. R. Kirtley, F. L. Pesavento, D. W. Dong, and S. D. Brorson, J. Appl. Phys. 57, 1214 (1985).
12. T. N. Thesis, D. J. DiMaria, J. R, Kirtley, and D. W. Dong, Phys. Rev. Lett. 52, 1445 (1984).
13. L. K. Han, H. H. Wang, J. Yan, and D. L. Kwong, Electron. Lett. 31, 1202 (1995).
14. M. Kiinura and T. Ohmi, J. Appl. Phys. 80, 6360 (1996).
15. D. J. Dimaria and E. Cartier, J. Appl. Phys. 78, 3883 (1995).