Magnetization switching by spin-orbit torque in an antiferromagnet-ferromagnet bilayer system

Nature Materials

Volumn 15, Issue 5, 2016, Pages 535-541

  Fukami, Shunsuke ^a   Zhang, Chaoliang ^a   Duttagupta, Samik ^a   Kurenkov, Aleksandr ^a   Ohno, Hideo ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROMAGNETIC MATERIALS; FERROMAGNETIC MATERIALS; FERROMAGNETISM; MAGNETIZATION; SWITCHING;

ANTIFERROMAGNETICS; IN-PLANE MAGNETIC FIELDS; INDUCED MAGNETIZATIONS; MAGNETIZATION SWITCHING; NEUROMORPHIC COMPUTING; PERPENDICULAR MAGNETIZATION; SPINTRONICS DEVICE; TYPICAL STRUCTURES;

SPIN HALL EFFECT;

EID: 84968368125     PISSN: 14761122     EISSN: 14764660     Source Type: Journal    
DOI: 10.1038/nmat4566     Document Type: Article

References (36)

1. Miron, I. M. et al. Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection. Nature 476, 189-193 (2011).
2. Liu, L. et al. Spin-torque switching with the giant spin Hall effect of tantalum. Science 336, 555-558 (2012).
3. Liu, L., Lee, O. J., Gudmundsen, T. J., Ralph, D. C. & Buhrman, R. A. Current-induced switching of perpendicularly magnetized magnetic layers using spin torque from the spin Hall effect. Phys. Rev. Lett. 109, 096602 (2012).
4. Pai, C.-F. et al. Spin transfer torque devices utilizing the giant spin Hall effect of tungsten. Appl. Phys. Lett. 101, 122404 (2012).
5. Kim, J. et al. Layer thickness dependence of the current-induced effective field vector in Ta/CoFeB/MgO. Nature Mater. 12, 240-245 (2013).
6. Lee, K.-S., Lee, S.-W., Min, B.-C. & Lee, K.-J. Threshold current for switching of a perpendicular magnetic layer induced by spin Hall effect. Appl. Phys. Lett. 102, 112410 (2013).
7. Yamanouchi, M. et al. Three terminal magnetic tunnel junction utilizing the spin Hall effect of iridium-doped copper. Appl. Phys. Lett. 102, 212408 (2013).
8. Garello, K. et al. Symmetry and magnitude of spin-orbit torques in ferromagnetic heterostructures. Nature Nanotech. 8, 587-593 (2013).
9. Zhang, C. et al. Magnetotransport measurements of current induced effective fields in Ta/CoFeB/MgO. Appl. Phys. Lett. 103, 262407 (2013).
10. Zhang, C. et al. Magnetization reversal induced by in-plane current in Ta/CoFeB/MgO structures with perpendicular magnetic easy axis. J. Appl. Phys. 115, 17C714 (2014).
11. Cubukcu, M. et al. Spin-orbit torque magnetization switching of a three-terminal perpendicular magnetic tunnel junction. Appl. Phys. Lett. 104, 042406 (2014).
12. Lee, K.-S., Lee, S.-W., Min, B.-C. & Lee, K.-J. Thermally activated switching of perpendicular magnet by spin-orbit spin torque. Appl. Phys. Lett. 104, 072413 (2014).
13. Pai, C.-F. et al. Enhancement of perpendicular magnetic anisotropy and transmission of spin-Hall-effect-induced spin currents by a Hf spacer layer in W/Hf/CoFeB/MgO layer structures. Appl. Phys. Lett. 104, 082407 (2014).
14. Fan, Y. et al. Magnetization switching through giant spin-orbit torque in a magnetically doped topological insulator heterostructure. Nature Mater. 13, 699-704 (2014).
15. Yu, G. et al. Switching of perpendicular magnetization by spin-orbit torques in the absence of external magnetic fields. Nature Nanotech. 9, 548-554 (2014).
16. Yu, G. et al. Current-driven perpendicular magnetization switching in Ta/CoFeB/[TaOx or MgO/TaOx ] films with lateral structural asymmetry. Appl. Phys. Lett. 105, 102411 (2014).
17. Garello, K. et al. Ultrafast magnetization switching by spin-orbit torques. Appl. Phys. Lett. 105, 212402 (2014).
18. Akyol, M. et al. Current-induced spin-orbit torque switching of perpendicularly magnetized Hf/CoFeB/MgO and Hf/CoFeB/TaOx structures. Appl. Phys. Lett. 106, 162409 (2015).
19. Zhang, C., Fukami, S., Sato, H., Matsukura, F. & Ohno, H. spin-orbit torque induced magnetization switching in nano-scale Ta/CoFeB/MgO. Appl. Phys. Lett. 107, 012401 (2015).
20. Fukami, S., Yamanouchi, M., Ikeda, S. & Ohno, H. Domain wall motion device for nonvolatile memory and logic-Size dependence of device properties. IEEE Trans. Magn. 50, 3401006 (2014).
21. Hoffmann, A. Spin Hall effect in metals. IEEE Trans. Magn. 49, 5172-5193 (2013).
22. Sinova, J., Valenzuela, S. O.,Wunderlich, J., Back, C. H. & Jungwirth, T. Spin Hall effects. Rev. Mod. Phys. 87, 1213-1259 (2015).
23. Chen, H., Niu, Q. & MacDonald, A. H. Anomalous Hall effect arising from noncollinear antiferromagnetism. Phys. Rev. Lett. 112, 017205 (2014).
24. Mendes, J. B. S. et al. Large inverse spin Hall effect in the antiferromagnetic metal Ir20Mn80. Phys. Rev. B 89, 140406 (2014).
25. Zhang,W. et al. Spin Hall effects in metallic antiferromagnets. Phys. Rev. Lett. 113, 196602 (2014).
26. Tshitoyan, Y. et al. Electrical manipulation of ferromagnetic NiFe by antiferromagnetic IrMn. Phys. Rev. B 92, 214406 (2015).
27. Meiklejohn,W. H. & Bean, C. P. New magnetic anisotropy. Phys. Rev. 102, 1413-1414 (1956).
28. Stiles, M. D. & McMichael, R. D. Model for exchange bias in polycrystalline ferromagnet-antiferromagnet bilayers. Phys. Rev. B 59, 3722-3733 (1999).
29. Tsunoda, M. & Takahashi, M. Field independent rotational hysteresis loss on exchange coupled polycrystalline Ni-Fe/Mn-Ir bilayers. J. Appl. Phys. 87, 6415-6417 (2000).
30. Chua, L. O. Memristor-the missing circuit element. IEEE Trans. Circuit Theory 18, 507-519 (1971).
31. Strukov, D. B., Snider, G. S., Stewart, D. R. &Williams, R. S. The missing memristor found. Nature 453, 80-83 (2008).
32. Jo, S. H. et al. Nanoscale memristor device as synapse in neuromorphic systems. Nano Lett. 10, 1297-1301 (2010).
33. Locatelli, N., Cros, V. & Grollier, J. Spin-torque building blocks. Nature Mater. 13, 11-20 (2014).
34. Merolla, P. A. et al. A million spiking-neuron integrated circuit with a scalable communication network and interface. Science 345, 668-673 (2014).
35. Suzuki, T. et al. Current-induced effective field in perpendicularly magnetized Ta/CoFeB/MgO wire. Appl. Phys. Lett. 98, 142505 (2011).
36. Kaplan, B. & Gehring, G. A. The domain structure in ultrathin magnetic films. J. Magn. Magn. Mater. 128, 111-116 (1993).