Spin-orbit torque magnetization switching of a three-terminal perpendicular magnetic tunnel junction

Applied Physics Letters

Volumn 104, Issue 4, 2014, Pages

  Cubukcu, Murat ^a   Boulle, Olivier ^a   Drouard, Marc ^a   Garello, Kevin ^b   Onur Avci, Can ^b   Mihai Miron, Ioan ^a   Langer, Juergen ^c   Ocker, Berthold ^c   Gambardella, Pietro ^b   Gaudin, Gilles ^a  

^a UMR 8191   (France)

^b ETH ZURICH   (Switzerland)

^c Singulus Technologies   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETIC DEVICES; MAGNETIC STORAGE; MAGNETISM; MAGNETIZATION; TUNNELLING MAGNETORESISTANCE;

BIAS MAGNETIC FIELD; CURRENT LINES; CURRENT PULSE; CURRENT-INDUCED MAGNETIZATION SWITCHING; MAGNETIC MEMORY CELLS; MAGNETIC TUNNEL JUNCTION; MAGNETIZATION SWITCHING; PROOF OF CONCEPT;

TUNNEL JUNCTIONS;

EID: 84901664977     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4863407     Document Type: Article

References (26)

1. N. S. Kim, T. Austin, D. Baauw, and T. Mudge, IEEE Comput. Soc. 36, 68-75 (2003). 10.1109/MC.2003.1250885
2. J. Hutchby and M. Garner, Assessment of the Potential and Maturity of Selected Emerging Research Memory Technologies Workshop and ERD/ERM Working Group Meeting, 6-7 April 2010 (ITRS Edition, 2010), p. 1.
3. M. H. Kryder and C. Soo Kim, IEEE Trans. Magn. 45, 3406 (2009) 10.1109/TMAG.2009.2024163.
4. W. S. Zhao, Y. Zhang, T. Devolder, J. O. Klein, D. Ravelosona, C. Chappert, and P. Mazoyer, Microelectron. Reliab. 52, 1848-1852 (2012). 10.1016/j.microrel.2012.06.035
5. M. Marins de Castro, R. C. Sousa, S. Bandiera, C. Ducruet, A. Chavent, S. Auffret, C. Papusoi, I. L. Prejbeanu, C. Portemont, L. Vila, U. Ebels, B. Rodmacq, and B. Dieny, J. Appl. Phys. 111, 07C912 (2012) 10.1063/1.3676610.
6. M. Gajek, J. J. Nowak, J. Z. Sun, P. L. Trouilloud, E. J. O'Sullivan, D. W. Abraham, M. C. Gaidis, G. Hu, S. Brown, Y. Zhu, R. P. Robertazzi, W. J. Gallagher, and D. C. Worledge, Appl. Phys. Lett. 100, 132408 (2012). 10.1063/1.3694270
7. G. Panagopoulos, C. Augustine, and K. Roy, in Proceedings of Device Research Conference (DRC) (2011), p. 125-126.
8. K. C. Chun, H. Zhao, J. Harms, T.-H. Kim, J.-P. Wang, and C. Kim, IEEE J. Solid-State Circuits 48, 598 (2013). 10.1109/JSSC.2012.2224256
9. I. M. Miron, K. Garello, G. Gaudin, P.-J. Zermatten, M. V. Costache, S. Auffret, S. Bandiera, B. Rodmacq, A. Schuhl, and P. Gambardella, Nature 476, 189 (2011). 10.1038/nature10309
10. C. O. Avci, K. Garello, I.-M. Miron, G. Gaudin, S. Auffret, O. Boulle, and P. Gambardella, Appl. Phys. Lett. 100, 212404 (2012) 10.1063/1.4719677.
11. L. Liu, C. Pai, Y. Li, H. M. Tseng, D. C. Ralph, and R. A. Buhrman, Science 336, 555 (2012) 10.1126/science.1218197.
12. P. M. Haney, H.-W. Lee, K.-J. Lee, A. Manchon, and M. D. Stiles, Phys. Rev. B 87, 174411 (2013). 10.1103/PhysRevB.87.174411
13. F. Freimuth, S. Blugel, and Y. Mokrousov, e-print arXiv:1305.4873 (2013).
14. P. M. Haney, H.-W. Lee, K.-J. Lee, A. Manchon, and M. D. Stiles, Phys. Rev. B 88, 214417 (2013). 10.1103/PhysRevB.88.214417
15. G. Gaudin, I. M. Miron, P. Gambardella, and A. Schuhl, " A writable magnetic memory element " US patent application 12/899,072, 12/899,091 (Oct 6th 2010), "A writable magnetic element" US patent application 12/959,980 (Dec. 3rd 2010)
16. M. Yamanouchi, L. Chen, J. Kim, M. Hayashi, H. Sato, S. Fukami, S. Ikeda, F. Matsukura, and H. Ohno, Appl. Phys. Lett. 102, 212408 (2013). 10.1063/1.4808033
17. C. Pai, L. Liu, Y. Li, H. M. Tseng, D. C. Ralph, and R. A. Buhrman, Appl. Phys. Lett. 101, 122404 (2012). 10.1063/1.4753947
18. K. Garello, C. O. Avci, I. M. Miron, O. Boulle, S. Auffret, P. Gambardella, and G. Gaudin, e-print arXiv:1310.5586 (2013).
19. K.-S. Lee, S.-W. Lee, B.-C. Min, and K.-J. Lee, Appl. Phys. Lett. 102, 112410 (2013). 10.1063/1.4798288
20. G. Finocchio, M. Carpentieri, E. Martinez, and B. Azzerboni, Appl. Phys. Lett. 102, 212410 (2013). 10.1063/1.4808092
21. S. Emori, U. Bauer, S. -M. Ahn, E. Martinez, and G. S. D. Beach, Nature Mater. 12, 611 (2013). 10.1038/nmat3675
22. K. Garello, I. M. Miron, C. O. Avci, F. Freimuth, Y. Mokrousov, S. Blügel, S. Auffret, O. Boulle, G. Gaudin, and P. Gambardella, Nat. Nanotechnol. 8, 587 (2013). 10.1038/nnano.2013.145
23. L. Liu, T. Moriyama, D. C. Ralph, and R. A. Buhrman, Phys. Rev. Lett. 106, 036601 (2011). 10.1103/PhysRevLett.106.036601
24. C. Hahn, G. de Loubens, O. Klein, and M. Viret, V. V. Naletov, and J. Ben Youssef, Phys. Rev. B 87, 174417 (2013). 10.1103/PhysRevB.87.174417
25. K. Yamane, Y. Higo, H. Uchida, Y. Nanba, S. Sasaki, H. Ohmori, K. Bessho, and M. Hosomi, IEEE Trans. Magn. 49 (7), 4335-4338 (2013). 10.1109/TMAG.2013.2246141
26. G. Jan, Y. -J. Wang, T. Moriyama, Y. -J. Lee, M. Lin, T. Zhong, R. -Y. Tong, T. Torng, and P. -K. Wang, Appl. Phys. Express 5, 93008 (2012). 10.1143/APEX.5.093008