Enhanced Exciton Binding Energy of ZnO by Long-Distance Perturbation of Doped Be Atoms

Journal of Physical Chemistry Letters

Volumn 7, Issue 8, 2016, Pages 1484-1489

  Su, Yu Quan ^a   Zhu, Yuan ^a,b   Yong, Dingyu ^c   Chen, Mingming ^a   Su, Longxing ^a   Chen, Anqi ^a   Wu, Yanyan ^a   Pan, Bicai ^c   Tang, Zikang ^a,d  

^a SUN YAT SEN UNIVERSITY   (China)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^d UNIVERSITY OF MACAU   (Macao)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; BINDING ENERGY; EXCITONS; II-VI SEMICONDUCTORS; SEMICONDUCTOR DOPING; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE;

DOPANT ATOMS; EXCITON-BINDING ENERGY; EXCITONIC EFFECT; FIRST PRINCIPLES; LOCAL EFFECTS; LOW-THRESHOLD LASING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84966948804     PISSN: None     EISSN: 19487185     Source Type: Journal    
DOI: 10.1021/acs.jpclett.6b00585     Document Type: Article

References (25)

1. Zhang, Q.; Li, G.; Liu, X.; Qian, F.; Li, Y.; Sum, T. C.; Lieber, C. M.; Xiong, Q. A Room Temperature Low-Threshold Ultraviolet Plasmonic Nanolaser Nat. Commun. 2014, 5, 4953 10.1038/ncomms5953
2. 0.94N Multiple-Quantum-Well Laser Diode Lased at 400 nm Appl. Phys. Lett. 2001, 79, 341 10.1063/1.1385583
3. Collado-Fregoso, E.; Boufflet, P.; Fei, Z.; Gann, E.; Ashraf, S.; Li, Z.; McNeill, C. R.; Durrant, J. R.; Heeney, M. Increased Exciton Dipole Moment Translates into Charge-Transfer Excitons in Thiophene-Fluorinated Low-Bandgap Polymers for Organic Photovoltaic Applications Chem. Mater. 2015, 27, 7934-7944 10.1021/acs.chemmater.5b02948
4. Ates, A.; Tuzemen, S.; Yildirim, M. Modification of Exciton Binding Energy in the Horizontal Bridgman-Stockbarger Growth of InSe by Ho Doping J. Appl. Phys. 2004, 96, 3324-3327 10.1063/1.1773377
5. Tang, Z. K.; Wong, G. K. L.; Yu, P.; Kawasaki, M.; Ohtomo, A.; Koinuma, H.; Segawa, Y. Room-Temperature Ultraviolet Laser Emission From Self-Assembled ZnO Microcrystallite Thin Films Appl. Phys. Lett. 1998, 72, 3270-3272 10.1063/1.121620
6. Tsukazaki, A.; Ohtomo, A.; Onuma, T.; Ohtani, M.; Makino, T.; Sumiya, M.; Ohtani, K.; Chichibu, S. F.; Fuke, S.; Segawa, Y. et al. Repeated Temperature Modulation Epitaxy for p-Type Doping and Light-Emitting Diode Based On ZnO Nat. Mater. 2004, 4, 42-46 10.1038/nmat1284
7. Ryu, Y. R.; Lubguban, J. A.; Lee, T. S.; White, H. W.; Jeong, T. S.; Youn, C. J.; Kim, B. J. Excitonic Ultraviolet Lasing in ZnO-Based Light Emitting Devices Appl. Phys. Lett. 2007, 90, 131115 10.1063/1.2718516
8. Klingshirn, C.; Fallert, J.; Zhou, H.; Kalt, H. Comment On "Excitonic Ultraviolett Lasing in ZnO-Based Light Emitting Devices" [Appl. Phys. Lett., 131115 (2007)] Appl. Phys. Lett. 2007, 91, 126101 10.1063/1.2786585
9. 1-XO Alloy Epitaxial Films J. Alloys Compd. 2014, 616, 505-509 10.1016/j.jallcom.2014.07.134
10. Su, L.; Zhu, Y.; Zhang, Q.; Chen, M.; Wu, T.; Gui, X.; Pan, B.; Xiang, R.; Tang, Z. Structure and Optical Properties of Ternary Alloy BeZnO and Quaternary Alloy BeMgZnO Films Growth by Molecular Beam Epitaxy Appl. Surf. Sci. 2013, 274, 341-344 10.1016/j.apsusc.2013.03.058
11. Su, L.; Zhu, Y.; Chen, M.; Zhang, Q.; Su, Y.; Ji, X.; Wu, T.; Gui, X.; Xiang, R.; Tang, Z. Temperature-Dependent Structural Relaxation of BeZnO Alloys Appl. Phys. Lett. 2013, 103, 072104 10.1063/1.4818155
12. Dvorak, M.; Wei, S. H.; Wu, Z. Origin of the Variation of Exciton Binding Energy in Semiconductors Phys. Rev. Lett. 2013, 110, 016402 10.1103/PhysRevLett.110.016402
13. Kresse, G.; Hafner, J. Ab Initio Molecular Dynamics for Liquid Metals Phys. Rev. B: Condens. Matter Mater. Phys. 1993, 47, 558-561 10.1103/PhysRevB.47.558
14. Kresse, G.; Furthmüller, J. Efficient Iterative Schemes for Ab Initio Total-Energy Calculations Using a Plane-Wave Basis Set Phys. Rev. B: Condens. Matter Mater. Phys. 1996, 54, 11169-11186 10.1103/PhysRevB.54.11169
15. Kresse, G.; Furthmüller, J. Efficiency of Ab-Initio Total Energy Calculations for Metals and Semiconductors Using a Plane-Wave Basis Set Comput. Mater. Sci. 1996, 6, 15-50 10.1016/0927-0256(96)00008-0
16. Kresse, G.; Joubert, D. From Ultrasoft Pseudopotentials to the Projector Augmented-Wave Method Phys. Rev. B: Condens. Matter Mater. Phys. 1999, 59, 1758-1775 10.1103/PhysRevB.59.1758
17. Perdew, J. P.; Burke, K.; Ernzerhof, M. Generalized Gradient Approximation Made Simple Phys. Rev. Lett. 1996, 77, 3865-3868 10.1103/PhysRevLett.77.3865
18. Cody, G. D.; Tiedje, T.; Abeles, B.; Brooks, B.; Goldstein, Y. The Qytical-Absorytion Edge of Hydrogenated Amoryhous Silicon Phys. Rev. Lett. 1981, 47, 1480 10.1103/PhysRevLett.47.1480
19. Urbach, F. The Long-Wavelength Edge of Photographic Sensitivity and of the Electronic Absorption of Solids Phys. Rev. 1953, 92, 1324 10.1103/PhysRev.92.1324
20. Martienssen, W. The Optical Absorption Edge in Ionic Crystals J. Phys. Chem. Solids 1959, 8, 294-296 10.1016/0022-3697(59)90343-9
21. Martienssen, W. Über Die Excitonenbanden Der Alkalihalogenidkristalle J. Phys. Chem. Solids 1957, 2, 257-267 10.1016/0022-3697(57)90070-7
22. Zhu, Y.; Su, L.; Chen, M.; Su, Y.; Ji, X.; Gui, X.; Tang, Z. Controlled Growth of Epitaxial Wurtzite BeMgZnO Alloy Films and Two Microscopic Origins of Be-Mg Mutual Stabilizing Mechanism J. Alloys Compd. 2015, 631, 355-359 10.1016/j.jallcom.2015.01.173
23. John, S.; Chou, M. Y.; Cohen, M. H.; Soukoulis, C. M. Density of States for an Electron in a Correlated Gaussian Random Potential: Theory of the Urbach Tail Phys. Rev. B: Condens. Matter Mater. Phys. 1988, 37, 6963-6976 10.1103/PhysRevB.37.6963
24. Kurik, M. V. Urbach Rule Phys. Status Solidi a 1971, 8, 9-45 10.1002/pssa.2210080102
25. Dow, J. D.; Redfield, D. Toward a Unified Theory of Urbach's Rule and Exponential Absorption Edges Phys. Rev. B 1972, 5, 594-610 10.1103/PhysRevB.5.594