Modification of exciton binding energy in the horizontal Bridgman-Stockbarger growth of InSe by Ho doping

Journal of Applied Physics

Volumn 96, Issue 6, 2004, Pages 3324-3327

  Ates A ^a   Tuzemen S ^a   Yildirim, M ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; BINDING ENERGY; EXCITONS; LIGHT ABSORPTION; OPTICAL RESOLVING POWER; PARAMETER ESTIMATION; PHASE DIAGRAMS; RARE EARTH ELEMENTS; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; STOICHIOMETRY; THERMAL EFFECTS;

ABSORPTION SPECTRUM; IONIC CRYSTALS; MICROBATTERIES; PHONON COUPLINGS;

INDIUM COMPOUNDS;

EID: 4944253515     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1773377     Document Type: Article

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