Effect of TiCl4 pre-treatment in PECVD-Ti process for sub-0.2 μm metal bit line contacts

Proceedings of the IEEE 2000 International Interconnect Technology Conference, IITC 2000

Volumn , Issue , 2000, Pages 70-72

  Kang, Sang Bom ^a   Moon, Kwang Jin ^a   Park, Hee Sook ^a   Lee, Myoung Bum ^a   Choi, Gil Weyun ^a   Park, Young Wook ^a   Lee, Sang In ^a   Lee, Moon Yong ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; INTERFACES (MATERIALS); TITANIUM COMPOUNDS;

BIT LINES; ELECTRICAL CHARACTERISTIC; LOW ASPECT RATIO; PLASMA PRE-TREATMENT; PRE-TREATMENT; TI FILM;

PLASMA CVD;

EID: 84962822432     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2000.854285     Document Type: Conference Paper

References (4)

1. J.C.Hu, T.C.Chang, L.J.Chen, Y.L.Yang, S.Y.Chen and C.Y.Chang, J.Vac.Sci.Technol.A, 17(4), p2389, 1999.
2. J.Hu, M.Ameen, G.Leusink, D.Webb and J.T.Hillman, Thin Solid Films, 308-309, p589, 1997.
3. J.Engqvist, U.Jansson, J.Lu and J.O.Carlsson, J.Vac.Sci.Technol.A, 12(1), p161, 1994
4. Y.Ohshita and K.Watanabe, J.Electrochem.Soc., V145, n7, p2558, 1998.