Emissivity of silicon: A mystery to some but not to all!

10th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2002

Volumn , Issue , 2002, Pages 21-29

  Lojek, B ^a  

^a ATMEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROMAGNETIC WAVE EMISSION; ELECTROMAGNETIC WAVES; HEAT TREATMENT; REFLECTION; REFRACTIVE INDEX; SEMICONDUCTOR DOPING;

ABSORBING MEDIUM; ABSORPTION CO-EFFICIENT; COMPLEX INDEX OF REFRACTION; INCIDENT RADIATION; PRODUCTION WAFERS; SEMI-CONDUCTOR WAFER; SEMI-TRANSPARENT MATERIALS; WAFER TEMPERATURE;

SILICON WAFERS;

EID: 84962338808     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RTP.2002.1039435     Document Type: Conference Paper

References (11)

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2. W. Aderhold, S. Poarch, A. Hunter, Reduction of Pattern Effects in RTP Centura, this conference
3. ATMEL Corporation, "L, RTP Wafer Set"™, 2001
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5. nd Editions, J. Wiley, NY 1981 (equations (69) on page 40 is incorrect)
6. J.C. Sturm, C.M. Reaves, Silicon Temperature Measurement by Infrared Absorption: Fundamental Process and Doping Effects, IEEE Transaction on Electron Devices, Vol. 39 (1992), pp.81-88
7. P.J. Timans, Emissivity of Silicon at Elevated Temperatures, J. Appl. Phys. Vol. 74 (1993), pp. 6353-6364
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11. K. Ishiguro, The Change of the Refractive Index of Semi-conducting Film Irradiated by Intense Light, J. Phys. Soc. Japan, Vol. 8 (1953), pp. 269-270