Understanding and modeling ramp rate effects on shallow junction formation

Materials Research Society Symposium - Proceedings

Volumn 610, Issue , 2000, Pages B.4.8.1-B.4.8.6

  Chakravarthi, Srinvasan ^a   Gencer, Alp H ^a   Dunham, Scott T ^a   Downey, Daniel F ^a  

^a BOSTON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 85009913438     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: 10.1557/PROC-610-B4.8     Document Type: Article

References (8)

1. Advances in rapid thermal processing
2. Physics and modeling of ion implantation induced transient enhanced diffusion in silicon
3. Non-equilibrium dopant diffusion in silicon