Cycle time and process improvement by single wafer thermal processing in production environment

10th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2002

Volumn , Issue , 2002, Pages 171-176

  Chen, K C ^a   Shih, H H ^a   Hsueh, C ^a   Chung, H ^a   Pam, S ^a   Lu, C Y ^a   Chou, C W ^b   Chen, S S ^b  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

^b APPLIED MATERIALS INC   (United States)

Author keywords

cycle time; Qbd; single wafer; STI

Indexed keywords

CRYSTAL DEFECTS; DANGLING BONDS; HEAT TREATMENT;

CYCLE TIME; CYCLE TIME REDUCTION; DIFFUSION CONTROLLED; OXIDATION TEMPERATURE; PRODUCT INTRODUCTION; PRODUCTION ENVIRONMENTS; SINGLE WAFER; SINGLE WAFER PROCESSING;

SILICON WAFERS;

EID: 84962429941     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RTP.2002.1039457     Document Type: Conference Paper

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