New complementary PVD-Ta/CVD-WN stacked barrier structure for copper metallization

Proceedings of the IEEE 2002 International Interconnect Technology Conference, IITC 2002

Volumn , Issue , 2002, Pages 194-196

  Tai, Kaori ^a   Ohtorii, H ^a   Takahashi, S ^a   Komai, N ^a   Horikoshi, H ^a   Sato, S ^a   Ohoka, Y ^a   Segawa, Y ^a   Ishihara, M ^a   Yasuda, Z ^a   Nogami, T ^a  

^a SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL ENGINEERING;

BARRIER PERFORMANCE; BARRIER STRUCTURES; COPPER METALLIZATION; CU-INTERCONNECTS; GALVANIC CORROSION; LINE RESISTANCE; SURFACE LAYERS; THERMAL PROCESS;

INTEGRATED CIRCUIT INTERCONNECTS;

EID: 84961683092     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2002.1014931     Document Type: Conference Paper

References (6)

1. M. Harada, E. Mizuno and N. Gonohe, Proceedings of 2000 Advanced Metallization Conference, pp. 397-402.
2. J. P. Lu, W. Y. Hsu, J. D.Luttmer, L.K. Magel and H. L. Tsai, J.Electrochem. Soc.,Vol. 145, No2 L21 (1998).
3. K. Mosig, H. Cox, E. Klawuhn, T. Suwwan de Felipe and A. Shiota, IEDM Tech. Dig., 2001 pp.88-91.
4. th symposium on semiconductors and integrated circuits technology, pp.71-76.
5. S. Kondo, N. Sakuma, Y. Homma and N. Ohashi, Jpn. J. Appl. Phys., 39, November, 6216 (2000).
6. T. Nogami, Y. C. Joo, S. Lopatin, J. Romero, J. Bernard, W. Blum, H. J. Engelmann, J. Gray, B. Tracy, S. Chen, T. Lukanc, D. Brown, P. Besser, G. Morales and R. Cheung, Proceedings of 1998 Advanced Metallization Conference, pp.313-319.