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Volumn , Issue , 2000, Pages 397-402
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Characteristics of WN barrier films grown using thermal CVD process with NH3 and SiH4 reduction
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Author keywords
[No Author keywords available]
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Indexed keywords
AMMONIA;
COMPOSITION;
DIFFUSION;
ELECTRIC RESISTANCE;
METALLIZING;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
REDUCTION;
SILANES;
BARRIER FILMS;
TUNGSTEN COMPOUNDS;
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EID: 0034459918
PISSN: 10480854
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (1)
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References (7)
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