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Volumn 22-27-September-2002, Issue , 2002, Pages 126-130
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TCAD modeling and experimental investigation of indium for advanced CMOS technology
a a b b b,d c c c |
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Author keywords
Annealing; Boron; Calibration; CMOS technology; Conducting materials; Implants; Indium; Semiconductor device modeling; Semiconductor materials; Silicon
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Indexed keywords
ANNEALING;
BORON;
CALIBRATION;
CMOS INTEGRATED CIRCUITS;
DENTAL PROSTHESES;
DIFFUSION;
ELECTRONIC DESIGN AUTOMATION;
INDIUM;
ION IMPLANTATION;
IONS;
SEMICONDUCTING INDIUM;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DEVICE MODELS;
SEMICONDUCTOR DEVICES;
SEMICONDUCTOR DOPING;
SEMICONDUCTOR MATERIALS;
SILICON;
SILICON OXIDES;
ANNEALING CONDITION;
CMOS TECHNOLOGY;
CONDUCTING MATERIALS;
DEFECT DISTRIBUTION;
DIFFUSION BEHAVIOR;
DIFFUSION LIMITED;
EXPERIMENTAL INVESTIGATIONS;
PROCESS SIMULATIONS;
SILICON WAFERS;
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EID: 84961367184
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/IIT.2002.1257955 Document Type: Conference Paper |
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Times cited : (3)
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References (8)
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