Optimum treatment for improvement of indium-halo structure for sub-0.1 μm n-type metal-oxide-semiconductor field-effect transistor

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 11 A, 2001, Pages

  Yeh, Wen Kuan ^a,b   Chou, Jih Wen ^a  

^a NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

^b UNITED MICROELECTRONICS CORPORATION   (Taiwan)

Author keywords

Halo; Indium; Post thermal annealing

Indexed keywords

INDIUM; ION IMPLANTATION; PERFORMANCE; RAPID THERMAL ANNEALING; RELIABILITY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; TEMPERATURE CONTROL; THERMAL EFFECTS;

INDIUM - HALO STRUCTURE; SALICIDATION; SHALLOW TRENCH ISOLATION;

MOSFET DEVICES;

EID: 0035517469     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l1139     Document Type: Letter

References (12)