Surface structure of sulfur-terminated GaAs by medium energy ion scattering

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 118, Issue 1-4, 1996, Pages 552-555

  Takai, Mikio ^a   Taketani, Masayuki ^a   Yokoi, Naoki ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMS; CHEMICAL BONDS; CRYSTAL LATTICES; ELECTRON SCATTERING; RELAXATION PROCESSES; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SULFUR; SURFACE CLEANING; SURFACE STRUCTURE; X RAY PHOTOELECTRON SPECTROSCOPY;

ADATOMS; BEAM SPOT SIZE; BLOCKING ANALYSIS; BLOCKING MEASUREMENTS; ENERGY RESOLUTION; ENERGY SPECTRA; INCIDENT ENERGY; LATTICE RELAXATION; MEDIUM ENERGY ION SCATTERING; THERMAL VIBRATIONS;

SURFACE TREATMENT;

EID: 0030565171     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(95)01106-4     Document Type: Article

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