Enhanced depth-resolution analysis with medium energy ion scattering (meis) for shallow junction profiling

Proceedings of the International Conference on Ion Implantation Technology

Volumn , Issue , 2000, Pages 604-606

  Tajima, J ^a   Park, Y K ^a   Fujita, M ^a   Takai, M ^a   Schork, R ^b   Frey, L ^b   Ryssel, H ^b  

^a OSAKA UNIVERSITY   (Japan)

^b FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC IONS; ELECTROSTATIC ANALYZER; ENERGY RESOLUTIONS; MEDIUM ENERGY ION SCATTERING; MINIMUM FEATURE SIZES; PROBE IONS; RESOLUTION ANALYSIS; SHALLOW JUNCTION; SHALLOW SOURCES;

ARSENIC; ION IMPLANTATION; PLASMA INTERACTIONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCATTERING; SILICON COMPOUNDS;

DEPTH PROFILING;

EID: 78649875506     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2000.924225     Document Type: Conference Paper

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