Realization of a tunable artificial atom at a supercritically charged vacancy in graphene

Nature Physics

Volumn 12, Issue 6, 2016, Pages 545-549

  Mao, Jinhai ^a   Jiang, Yuhang ^a   Moldovan, Dean ^b   Li, Guohong ^a   Watanabe, Kenji ^c   Taniguchi, Takashi ^c   Masir, Massoud Ramezani ^b,d   Peeters, Francois M ^b   Andrei, Eva Y ^a  

^a RUTGERS UNIVERSITY   (United States)

^b UNIVERSITY OF ANTWERP   (Belgium)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^d UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; ELECTRONIC PROPERTIES; ELECTRONS;

ARTIFICIAL ATOMS; COMPUTING APPLICATIONS; CONDUCTION ELECTRONS; ITINERANT ELECTRONS; QUASI-BOUND STATE; STRONG ENHANCEMENT; SUPERCRITICAL REGIME; TRAPPING MECHANISMS;

GRAPHENE;

EID: 84959115646     PISSN: 17452473     EISSN: 17452481     Source Type: Journal    
DOI: 10.1038/nphys3665     Document Type: Article

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