Utilizing modeling, experiments, and statistics for the analysis of water-splitting photoelectrodes

Journal of Materials Chemistry A

Volumn 4, Issue 8, 2016, Pages 3100-3114

  Gaudy, Yannick K ^a   Haussener, Sophia ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER TRANSPORT; DESIGN OF EXPERIMENTS; ELECTROLYTES; ELECTROMAGNETIC WAVE PROPAGATION; GALLIUM NITRIDE; INTERFACE STATES; PHOTOELECTROCHEMICAL CELLS; SEMICONDUCTOR DOPING;

CURRENT VOLTAGE MEASUREMENT; DESIGN CONSIDERATIONS; FLAT-BAND POTENTIALS; MULTI-PHYSICS MODELING; PHOTO-ELECTROCHEMICAL DEVICE; PHOTOCURRENT DENSITY; SEMICONDUCTOR ELECTROLYTE INTERFACES; SURFACE RECOMBINATIONS;

NUMERICAL MODELS;

EID: 84959016777     PISSN: 20507488     EISSN: 20507496     Source Type: Journal    
DOI: 10.1039/c5ta07328f     Document Type: Article

References (59)

1. K. Sivula Chimia 2013 67 155 161
2. M. A. Modestino S. Haussener Annu. Rev. Chem. Biomol. Eng. 2014 6 13 34
3. T. J. Jacobsson V. Fjällström M. Edoff T. Edvinsson Energy Environ. Sci. 2014 7 2056 2070
4. M. G. Walter E. L. Warren J. R. McKone S. W. Boettcher Q. Mi E. a. Santori N. S. Lewis Chem. Rev. 2010 110 6446 6473
5. A. C. Nielander M. R. Shaner K. M. Papadantonakis S. a. Francis N. S. Lewis Energy Environ. Sci. 2015 8 16 25
6. A. J. Nozik R. Memming J. Phys. Chem. 1996 100 13061 13078
7. J.-N. Chazalviel J. Electrochem. Soc. 1982 129 963 969
8. D. Vanmaekelbergh Electrochim. Acta 1997 42 1121 1134
9. D. Vanmaekelbergh Electrochim. Acta 1997 42 1135 1141
10. M. N. Latto G. Pastor-Moreno D. J. Riley Electroanalysis 2004 16 434 441
11. J. Reichman Appl. Phys. Lett. 1980 36 574 577
12. R. Memming, Semiconductor Electrochemistry, Wiley-VCH, Weinheim, 2001
13. T. J. Mills F. Lin S. W. Boettcher Phys. Rev. Lett. 2014 112 148304
14. P. Cendula S. D. Tilley S. Gimenez J. Bisquert M. Schmid M. Grätzel J. O. Schumacher J. Phys. Chem. C 2014 118 29599 29607
15. A. Berger J. Newman J. Electrochem. Soc. 2014 161 3328 3340
16. F. E. Osterloh Chem. Soc. Rev. 2013 42 2294 2320
17. T. Lopes L. Andrade F. Le Formal M. Gratzel K. Sivula A. Mendes Phys. Chem. Chem. Phys. 2014 16 16515 16523
18. R. Siegel and J. Howell, Thermal radiation heat transfer, Taylor & Francis, London, 4th edn, 2001
19. J. Newman and K. E. Thomas-Alyea, Electrochemical Systems, John Wiley & Sons, Inc., 3rd edn, 2001
20. A. J. Bard and L. R. Faulkner, Electrochemical Methods: Fundamentals and Application, John Wiley & Sons, Inc., 2nd edn, 2001
21. K. J. Vetter, Electrochemical Kinetics Theoretical and Experimental Aspects, Academic Press Inc., 1967
22. S. Haussener C. Xiang J. M. Spurgeon S. Ardo N. S. Lewis A. Z. Weber Energy Environ. Sci. 2012 5 9922 9935
23. D. M. Pozar, Microwave Engineering, 4th edn, 2012
24. K. K. N. S. M. Sze, Physics of semiconductor devices, Wiley-inte, 2007
25. K. Gullbinas V. Grivickas H. P. Mahabadi M. Usman A. Hallen Mater. Sci. 2011 17 119 124
26. A. B. Sproul J. Appl. Phys. 1994 76 2851 2854
27. D. J. Michalak F. Gstrein N. S. Lewis J. Phys. Chem. C 2008 112 5911 5921
28. R. van de Krol and M. Grätzel, Photoelectrochemical Hydrogen Production, Springer, New York, 2012
29. R. Memming, Semiconductor Electrolyte, Wiley-VCH, 1999
30. A. Hagfeldt U. Björkstén M. Grätzel J. Phys. Chem. 1996 100 8045 8048
31. K. Gelderman L. Lee S. W. Donne J. Chem. Educ. 2007 84 685 688
32. L. Ivanova S. Borisova H. Eisele M. Dähne a. Laubsch P. Ebert Appl. Phys. Lett. 2008 93 7 10
33. C. G. Van De Walle D. Segev J. Appl. Phys. 2007 101 081704
34. Comsol Multiphysics v5.0, 2015
35. D. C. Montgomery, Design and Analysis of Experiments, John Wiley & Sons, Inc., New York, 7th edn, 2008
36. State-Ease Design Expert v9, 2015
37. A. Nicolet S. Guenneau C. Geuzaine F. Zolla J. Comput. Appl. Math. 2004 168 321 329
38. E. A. B. Cole, Mathematical and Numerical Modelling of Heterostructure Semiconductor Devices: From Theory to Programming, Springer, 2009
39. S. Adachi, Optical Constants of Crystalline and Amorphous Semiconductors: Numerical Data and Graphical Information, Kluwer Academic Publishers, Norwell, MA, 1999
40. G. M. Hale M. R. Querry Appl. Opt. 1973 12 555 563
41. S. Nakamura M. R. Krames Proc. IEEE 2013 101 2211 2220
42. J. I. Pankove S. Bloom G. Harbeke RCA Rev. 1975 36 163
43. S. Bloom G. Harbeke E. Meier I. B. Ortenburger Phys. Status Solidi 1974 66 161 168
44. J. F. Muth J. H. Lee I. K. Shmagin R. M. Kolbas H. C. Casey B. P. Keller U. K. Mishra S. P. DenBaars Appl. Phys. Lett. 1997 71 2572 2574
45. J. Piprek R. Sink M. A. Hansen J. E. Bowers S. P. DenBaars Proc. SPIE 2000 3944 3912 3944
46. P. Mackowiak W. Nakwaski MRS Internet J. Nitride Semicond. Res. 1998 3 1 10
47. V. Bougrov, M. E. Levinshtein, S. L. Rumyantsev and A. Zubrilov, Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe, John Wiley & Sons, New York, 2001, vol. 1
48. T. P. Chow and M. Ghezzo, SiC Power Devices in III-Nitride, SiC and Diamond Materials for Electronic Devices, Material Research Society Symposium Proceedings, Pittsburg, PA, 1996, vol. 423
49. M. Ono K. Fujii T. Ito Y. Iwaki A. Hirako T. Yao K. Ohkawa J. Chem. Phys. 2007 126 054708
50. M. Rubin N. Newman J. S. Chan T. C. Fu J. T. Ross Appl. Phys. Lett. 1994 64 1 64 66
51. M. Ono K. Fujii T. Ito Y. Iwaki A. Hirako T. Yao K. Ohkawa J. Chem. Phys. 2007 126 054708
52. A. Nakamura M. Sugiyama K. Fujii Y. Nakano Jpn. J. Appl. Phys. 2013 52 08JN20
53. O. Madelung, U. Rössler, D. Strauch and S. Adachi, Group IV elements, IV-IV and III-V compounds, Springer, 2001
54. P. Stallinga, Electrical Characterization of Organic Electronic Materials and Devices, John Wiley & Sons, Chichester, 2009
55. J. J. Kelly R. Memming J. Electrochem. Soc. 1982 129 730 738
56. Light, Water, Hydrogen, ed., C. A. Grimes, O. K. Varghese, and, S. Ranjan, Springer, New York, 2008
57. S. S. Kocha M. W. Peterson D. J. Arent J. M. Redwing M. A. Tischler J. A. Turner J. Electrochem. Soc. 1995 142 238 240
58. J. Y. Kim J.-W. Jang D. H. Youn G. Magesh J. S. Lee Adv. Energy Mater. 2014 4 1 7
59. L. Jing J. Zhou J. R. Durrant J. Tang D. Liu H. Fu Energy Environ. Sci. 2012 5 6552 6558