Thermal and electrical barrier performance testing of ultrathin atomic layer deposition tantalum-based materials for nanoscale copper metallization

Proceedings of the IEEE 2002 International Interconnect Technology Conference, IITC 2002

Volumn , Issue , 2002, Pages 188-190

  Van Der Straten, O ^a   Zhu, Y ^a   Eisenbraun, E ^a   Kaloyeros, A ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; DEPOSITION; INTEGRATED CIRCUIT INTERCONNECTS; MATERIALS TESTING; ORGANOMETALLICS; TANTALUM; TANTALUM COMPOUNDS; ULTRATHIN FILMS;

BARRIER PERFORMANCE; COPPER DIFFUSION BARRIER; COPPER METALLIZATION; DEVICE GENERATION; DIELECTRIC SYSTEMS; INTEGRABILITY; METAL ORGANIC ATOMIC LAYER DEPOSITIONS; TANTALUM NITRIDES;

ATOMIC LAYER DEPOSITION;

EID: 84958172767     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2002.1014929     Document Type: Conference Paper

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