A comparative study of Cd- and Zn-compound buffer layers on Cu(In1-x,Gax)(Sy,Se1-y)2 thin film solar cells

Progress in Photovoltaics: Research and Applications

Volumn 24, Issue 3, 2016, Pages 389-396

  Kobayashi, Taizo ^a   Jehl Li Kao, Zacharie ^a   Kato, Takuya ^b   Sugimoto, Hiroki ^b   Nakada, Tokio ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b Solar Frontier KK   (Japan)

Author keywords

admittance spectroscopy; buffer layer; Cu(In,Ga)(S,Se)2; heat light soaking; selenization and sulfurization; thin film solar cell

Indexed keywords

ATOMIC LAYER DEPOSITION; BUFFER LAYERS; CADMIUM COMPOUNDS; CADMIUM SULFIDE; CADMIUM SULFIDE SOLAR CELLS; COPPER; ELECTRIC ADMITTANCE; GALLIUM; OPEN CIRCUIT VOLTAGE; OPTICAL WAVEGUIDES; SEMICONDUCTING SELENIUM COMPOUNDS; THIN FILMS; ZINC; ZINC SULFIDE;

ADMITTANCE SPECTROSCOPIES; CU(IN ,GA)(S ,SE)2; LIGHT SOAKING; SELENIZATION; THIN FILM SOLAR CELLS;

SOLAR CELLS;

EID: 84958117113     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.2695     Document Type: Article

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