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Materials Chemistry and Physics

Volumn 172, Issue , 2016, Pages 165-172

Single crystal growth and electronic structure of TlPbI3

(7) Khyzhun, O Y a Fochuk, P M b Kityk, I V c Piasecki, M d Levkovets, S I e Fedorchuk, A O f Parasyuk, O V e

a FRANTSEVICH INSTITUTE FOR PROBLEMS OF MATERIALS SCIENCE (Ukraine)

b CHERNIVTSI NATIONAL UNIVERSITY (Ukraine)

c CZESTOCHOWA UNIVERSITY OF TECHNOLOGY (Poland)

d JAN DLUGOSZ UNIVERSITY (Poland)

e LESYA UKRAINKA EASTERN EUROPEAN NATIONAL UNIVERSITY (Ukraine)

f LVIV NATIONAL UNIVERSITY OF VETERINARY MEDICINE AND BIOTECHNOLOGIES (Ukraine)

Author keywords

Crystal growth; Electronic structure; Optical materials; Photoelectron spectroscopy; Semiconductors

Indexed keywords

CORE LEVELS; CRYSTAL GROWTH; CRYSTAL STRUCTURE; ELECTRONIC STRUCTURE; ION BOMBARDMENT; LEAD; OPTICAL MATERIALS; PHOTOELECTRON SPECTROSCOPY; PHOTOELECTRONS; PHOTONS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; SINGLE CRYSTALS; THALLIUM;

BRIDGMAN-STOCKBARGER METHOD; FORMAL VALENCES; ION BOMBARDED SURFACE; PARTIAL TRANSFORMATION; PHOTOINDUCED BIREFRINGENCE; VALENCE BAND SPECTRA; VALENCE STATE; XPS MEASUREMENTS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84956704568 PISSN: 02540584 EISSN: None Source Type: Journal
DOI: 10.1016/j.matchemphys.2016.01.058 Document Type: Article

Times cited : (35)

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