Hexagonal boron nitride is an indirect bandgap semiconductor

Nature Photonics

Volumn 10, Issue 4, 2016, Pages 262-266

  Cassabois, G ^a   Valvin, P ^a   Gil, B ^a  

^a UNIV MONTPELLIER   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; BORON NITRIDE; CHEMICAL STABILITY; ENERGY GAP; III-V SEMICONDUCTORS; NITRIDES; SEMICONDUCTOR QUANTUM WELLS; VAN DER WAALS FORCES;

DEEP ULTRAVIOLET; EXCITON-BINDING ENERGY; EXTREME CONDITIONS; HEXAGONAL BORON NITRIDE; INDIRECT BANDGAP SEMICONDUCTORS; OPTICAL SPECTROSCOPY; SIMPLE STRUCTURES; TWO-PHOTON SPECTROSCOPY;

WIDE BAND GAP SEMICONDUCTORS;

EID: 84955569616     PISSN: 17494885     EISSN: 17494893     Source Type: Journal    
DOI: 10.1038/nphoton.2015.277     Document Type: Article

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