Excitonic states and their wave functions in anisotropic materials: A computation using the finite-element method and its application to AlN

Physica Status Solidi (B) Basic Research

Volumn 249, Issue 3, 2012, Pages 455-458

  Gil, Bernard ^a   Felbacq, Didier ^a   Guizal, Brahim ^a   Bouchitté, Guy ^b  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b UNIVERSITÉ DE TOULON   (France)

Author keywords

Excitons; Nitrides; Wide bandgap semiconductors

Indexed keywords

ALUMINUM NITRIDE; ANISOTROPY; ELECTROMAGNETIC FIELDS; EXCITONS; III-V SEMICONDUCTORS; NITRIDES; WAVE FUNCTIONS; WIDE BAND GAP SEMICONDUCTORS;

ANISOTROPIC MATERIAL; BAND STRUCTURE CALCULATION; CYLINDRICAL SYMMETRY; EXCITONIC STATE; HYDROGENIC LEVELS; ITS APPLICATIONS; OSCILLATOR STRENGTHS;

FINITE ELEMENT METHOD;

EID: 84857438882     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.201100142     Document Type: Article

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