Temperature dependence of the LO phonon sidebands in free exciton emission of GaN

Journal of Applied Physics

Volumn 99, Issue 7, 2006, Pages

  Xu, S J ^a   Li, G Q ^a   Xiong, S J ^a,b   Che, C M ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; EXCITONS; GALLIUM NITRIDE; PHOTONS; TEMPERATURE CONTROL;

FREE EXCITONS; HEAVY HOLES; ZERO-PHONON;

PHONONS;

EID: 33645933910     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2188034     Document Type: Article

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