Evaluation of high dose, high energy boron implantation into Cz substrates for Epi-replacement in CMOS technology

IEEE Transactions on Electron Devices

Volumn 48, Issue 9, 2001, Pages 2043-2049

  Bourdelle, Konstantin K ^b   Chen, Yuanning ^a,b   Ashton, Robert A ^a,b   Rubin, Leonard M ^c   Agarwal, Aditya ^c   Morris, Wesley H ^a,d  

^a IEEE

^b AGERE SYSTEMS   (United States)

^c AXCELIS TECHNOLOGIES   (United States)

^d Silicon Engineering   (United States)

Author keywords

Leakage current; Metal oxide semiconductor (MOS) devices; Terms Ion implantation; Time dependent dielectric breakdown (TDDB)

Indexed keywords

BORON; ELECTRIC BREAKDOWN; EPITAXIAL GROWTH; HEAT TREATMENT; ION IMPLANTATION; LEAKAGE CURRENTS; MOS DEVICES; SEMICONDUCTOR DEVICES;

DIODE LEAKAGE; GATE OXIDE INTEGRITY; LATCH UP SUPPRESSION; TIME DEPENDENT DIELECTRIC BREAKDOWN;

CMOS INTEGRATED CIRCUITS;

EID: 0035444709     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.944194     Document Type: Article

References (16)

1. Comparison of latch-up in p- and n-well CMOS circuits
2. Effects of intrinsic gettering on RAM corruption and device yield of a CMOS process
3. Device characteristics of MOSFET's in MeV implanted substrates
4. Self-gettering and proximity gettering for buried layer formation by MeV ion implantation
5. Improvement of CMOS latch-up immunity using a high energy implanted buried layer
6. High energy implantation for profiled tub formation and impurity gettering in deep submicron CMOS technology
7. + buried layers
8. Impurity effects on oxygen precipitation induced by MeV implants in Cz silicon
9. Formation of extended defects in silicon by high energy implantation of B and P
10. A merged 2.5 V and 3.3 V 0.25 μm CMOS technology for ASICs
11. MOSFET drain engineering for ESD performance
12. Test structure and a modified transmission line pulse system for the study of electrostatic discharge
13. An accurate and computationally-efficient model of boron implantation through screen oxide layers into (100) single-crystal silicon
14. Evaluation of microscopic leakage current induced by bulk micro defects
15. The effect of as-implanted damage on the microstructure of threading dislocations in MeV implanted silicon
16. Suppression of reverse short channel effect by high energy implantation