Atomic force microscopy analysis of Ga-face and N-face GaN grown on Al2O3 (0001) by plasma-assisted molecular beam epitaxy

ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems

Volumn , Issue , 2000, Pages 355-358

  Kostopoulos, A ^a   Mikroulis, S ^a   Dimakis, E ^a   Tsagaraki, K ^a   Constantinidis, G ^a   Georgakilas, A ^a  

^a INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; MICROSYSTEMS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MORPHOLOGY; SURFACE MORPHOLOGY; SURFACE ROUGHNESS; THIN FILMS;

DIRECT ASSESSMENT; FLUX RATIO; GAN FILM; GAN THIN FILMS; KOH SOLUTION; PLASMA ASSISTED MOLECULAR BEAM EPITAXY; RF PLASMA;

SEMICONDUCTOR DEVICES;

EID: 84951977088     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ASDAM.2000.889519     Document Type: Conference Paper

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