Origin of the magnetoresistance in oxide tunnel junctions determined through electric polarization control of the interface

Physical Review X

Volumn 5, Issue 4, 2015, Pages

  Inoue, Hisashi ^a   Swartz, Adrian G ^a   Harmon, Nicholas J ^b   Tachikawa, Takashi ^c,d   Hikita, Yasuyuki ^c   Flatté, Michael E ^b   Hwang, Harold Y ^a,c  

^a STANFORD UNIVERSITY   (United States)

^b UNIVERSITY OF IOWA   (United States)

^c SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

^d UNIVERSITY OF TOKYO   (Japan)

Author keywords

Materials Science; Semiconductor Physics; Spintronics

Indexed keywords

MAGNETOELECTRONICS; MAGNETORESISTANCE; MATERIALS SCIENCE; SEMICONDUCTOR JUNCTIONS; TUNNEL JUNCTIONS; TUNNELLING MAGNETORESISTANCE;

CANDIDATE MATERIALS; ELECTRIC POLARIZATION; EXPERIMENTAL PLATFORM; OXIDE HETEROSTRUCTURES; SEMICONDUCTOR PHYSICS; SPIN DEPENDENT HOPPING; SPINTRONICS APPLICATION; THEORETICAL FRAMEWORK;

MATERIALS PROPERTIES;

EID: 84951145169     PISSN: None     EISSN: 21603308     Source Type: Journal    
DOI: 10.1103/PhysRevX.5.041023     Document Type: Article

References (38)

1. S. P. Dash, S. Sharma, R. S. Patel, M. P. de Jong, and R. Jansen, Electrical Creation of Spin Polarization in Silicon at Room Temperature, Nature (London) 462, 491 (2009).
2. M. Tran, H. Jaffrès, C. Deranlot, J.-M. George, A. Fert, A. Miard, and A. Lemaître, Enhancement of the Spin Accumulation at the Interface between a Spin-Polarized Tunnel Junction and a Semiconductor, Phys. Rev. Lett. 102, 036601 (2009).
3. N. Reyren, M. Bibes, E. Lesne, J.-M. George, C. Deranlot, S. Collin, A. Barthélémy, and H. Jaffrès, Gate-Controlled Spin Injection at LaAlO3=SrTiO3 Interfaces, Phys. Rev. Lett. 108, 186802 (2012).
4. W. Han, X. Jiang, A. Kajdos, S.-H. Yang, S. Stemmer, and S. S. P. Parkin, Spin Injection and Detection in Lanthanumand Niobium-Doped SrTiO3 Using the Hanle Technique, Nat. Commun. 4, 2134 (2013).
5. R. Jansen, S. P. Dash, S. Sharma, and B. C. Min, Silicon Spintronics with Ferromagnetic Tunnel Devices, Semicond. Sci. Technol. 27, 083001 (2012).
6. X. Lou, C. Adelmann, M. Furis, S. A. Crooker, C. J. Palmstrøm, and P. A. Crowell, Electrical Detection of Spin Accumulation at a Ferromagnet-Semiconductor Interface, Phys. Rev. Lett. 96, 176603 (2006).
7. O. Txoperena, M. Gobbi, A. Bedoya-Pinto, F. Golmar, X. Sun, L. E. Hueso, and F. Casanova, How Reliable Are Hanle Measurements in Metals in a Three-Terminal Geometry? Appl. Phys. Lett. 102, 192406 (2013).
8. O. Txoperena, Y. Song, L. Qing, M. Gobbi, L. E. Hueso, H. Dery, and F. Casanova, Impurity-Assisted Tunneling Magnetoresistance under a Weak Magnetic Field, Phys. Rev. Lett. 113, 146601 (2014).
9. A. G. Swartz, S. Harashima, Y. Xie, D. Lu, B. Kim, C. Bell, Y. Hikita, and H. Y. Hwang, Spin-Dependent Transport across Co=LaAlO3=SrTiO3 Heterojunctions, Appl. Phys. Lett. 105, 032406 (2014).
10. R. I. Dzhioev, K. V. Kavokin, V. L. Korenev, M. V. Lazarev, B. Ya. Meltser, M. N. Stepanova, B. P. Zakharchenya, D. Gammon, and D. S. Katzer, Low-Temperature Spin Relaxation in n-Type GaAs, Phys. Rev. B 66, 245204 (2002).
11. J. M. Kikkawa and D. D. Awschalom, Resonant Spin Amplification in n-Type GaAs, Phys. Rev. Lett. 80, 4313 (1998).
12. Y. Song and H. Dery, Magnetic-Field-Modulated Resonant Tunneling in Ferromagnetic-Insulator-Nonmagnetic Junctions, Phys. Rev. Lett. 113, 047205 (2014).
13. S. G. Bhat and P. S. A. Kumar, Room Temperature Electrical Spin Injection into GaAs by an Oxide Spin Injector, Sci. Rep. 4, 5588 (2014).
14. R. Jansen, A. M. Deac, H. Saito, and S. Yuasa, Injection and Detection of Spin in a Semiconductor by Tunneling via Interface States, Phys. Rev. B 85, 134420 (2012).
15. H. Y. Hwang, Y. Iwasa, M. Kawasaki, B. Keimer, N. Nagaosa, and Y. Tokura, Emergent Phenomena at Oxide Interfaces, Nat. Mater. 11, 103 (2012).
16. O. N. Tufte and P.W. Chapman, Electron Mobility in Semiconducting Strontium Titanate, Phys. Rev. 155, 796 (1967).
17. Y. Kozuka, Y. Hikita, C. Bell, and H. Y. Hwang, Dramatic Mobility Enhancements in Doped SrTiO3 Thin Films by Defect Management, Appl. Phys. Lett. 97, 012107 (2010).
18. C. Sahin, G. Vignale, and M. E. Flatté, Derivation of Effective Spin-Orbit Hamiltonians and Spin Lifetimes, with Application to SrTiO3 Heterostructures, Phys. Rev. B 89, 155402 (2014).
19. A. M. Kamerbeek, P. Högl, J. Fabian, and T. Banerjee, Electric Field Control of Spin Lifetimes in Nb-SrTiO3 by Spin-Orbit Fields, Phys. Rev. Lett. 115, 136601 (2015).
20. T. Yajima, M. Minohara, C. Bell, H. Kumigashira, M. Oshima, H. Y. Hwang, and Y. Hikita, Enhanced Electrical Transparency by Ultrathin LaAlO3 Insertion at Oxide Metal/Semiconductor Heterointerfaces, Nano Lett. 15, 1622 (2015).
21. See Supplemental Material at http://link.aps.org/ supplemental/10.1103/PhysRevX.5.041023 for the details on the contact synthesis, the principle of IETS, examinations of the spin accumulation and ILS models, and additional details on the spin-dependent hopping models.
22. S. P. Dash, S. Sharma, J. C. Le Breton, J. Peiro, H. Jaffrès, J.-M. George, A. Lemaître, and R. Jansen, Spin Precession and Inverted Hanle Effect in a Semiconductor near a Finite- Roughness Ferromagnetic Interface, Phys. Rev. B 84, 054410 (2011).
23. Y. Aoki, M. Kameno, Y. Ando, E. Shikoh, Y. Suzuki, T. Shinjo, M. Shiraishi, T. Sasaki, T. Oikawa, and T. Suzuki, Investigation of the Inverted Hanle Effect in Highly Doped Si, Phys. Rev. B 86, 081201 (2012).
24. I. Appelbaum, H. N. Tinkey, and P. Li, Self-Consistent Model of Spin Accumulation Magnetoresistance in Ferromagnet/ Insulator/Semiconductor Tunnel Junctions, Phys. Rev. B 90, 220402 (2014).
25. A. M. Kamerbeek, E. K. de Vries, A. Dankert, S. P. Dash, B. J. van Wees, and T. Banerjee, Electric Field Effects on Spin Accumulation in Nb-Doped SrTiO3 Using Tunable Spin Injection Contacts at Room Temperature, Appl. Phys. Lett. 104, 212106 (2014).
26. D. C. Tsui, R. E. Dietz, and L. R. Walker, Multiple Magnon Excitation in NiO by Electron Tunneling, Phys. Rev. Lett. 27, 1729 (1971).
27. C. J. Adkins and W. A. Phillips, Inelastic Electron Tunnelling Spectroscopy, J. Phys. C 18, 1313 (1985).
28. H. N. Tinkey, P. Li, and I. Appelbaum, Inelastic Electron Tunneling Spectroscopy of Local "Spin Accumulation" Devices, Appl. Phys. Lett. 104, 232410 (2014).
29. Z. Yue, M. C. Prestgard, A. Tiwari, and M. E. Raikh, Resonant Magnetotunneling between Normal and Ferromagnetic Electrodes in Relation to the Three-Terminal Spin Transport, Phys. Rev. B 91, 195316 (2015).
30. K. Ono, D. G. Austing, Y. Tokura, and S. Tarucha, Current Rectification by Pauli Exclusion in a Weakly Coupled Double Quantum Dot System, Science 297, 1313 (2002).
31. D. Ephron, Y. Xu, and M. R. Beasley, Observation of Coulomb Correlations of Resonant Tunneling and Inelastic Hopping, Phys. Rev. Lett. 69, 3112 (1992).
32. ö. Mermer, G. Veeraraghavan, T. L. Francis, Y. Sheng, D. T. Nguyen, M. Wohlgenannt, A. Köhler, M. K. Al-Suti, and M. S. Khan, Large Magnetoresistance in Nonmagnetic p- Conjugated Semiconductor Thin Film Devices, Phys. Rev. B 72, 205202 (2005).
33. P. A. Bobbert, T. D. Nguyen, F.W. A. van Oost, B. Koopmans, and M. Wohlgenannt, Bipolaron Mechanism for Organic Magnetoresistance, Phys. Rev. Lett. 99, 216801 (2007).
34. N. J. Harmon and M. E. Flatté, Spin-Flip Induced Magnetoresistance in Positionally Disordered Organic Solids, Phys. Rev. Lett. 108, 186602 (2012).
35. N. J. Harmon and M. E. Flatté, Organic Magnetoresistance from Deep Traps, J. Appl. Phys. 116, 043707 (2014).
36. J. H. Davies, S. Hershfield, P. Hyldgaard, and J.W.Wilkins, Current and Rate Equation for Resonant Tunneling, Phys. Rev. B 47, 4603 (1993).
37. Y. Sheng, T. D. Nguyen, G. Veeraraghavan, ö. Mermer, and M. Wohlgenannt, Effect of Spin-Orbit Coupling on Magnetoresistance in Organic Semiconductors, Phys. Rev. B 75, 035202 (2007).
38. P. Li, J. Li, L. Qing, H. Dery, and I. Appelbaum, Anisotropy- Driven Spin Relaxation in Germanium, Phys. Rev. Lett. 111, 257204 (2013).