Electric field effects on spin accumulation in Nb-doped SrTiO3 using tunable spin injection contacts at room temperature

Applied Physics Letters

Volumn 104, Issue 21, 2014, Pages

  Kamerbeek, A M ^a   De Vries, E K ^a   Dankert, A ^b   Dash, S P ^b   Van Wees, B J ^a   Banerjee, T ^a  

^a UNIVERSITY OF GRONINGEN   (Netherlands)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

NIOBIUM OXIDE; STRONTIUM TITANATES;

ELECTRICALLY TUNABLE; NB-DOPED SRTIO; OXIDE SEMICONDUCTOR; RELATIVE PERMITTIVITY; ROOM TEMPERATURE; SPIN INJECTION; SPIN LIFETIMES; SPIN-ACCUMULATIONS;

ELECTRIC FIELD EFFECTS;

EID: 84901778605     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4880895     Document Type: Article

References (29)

1. P. Zubko, S. Gariglio, M. Gabay, P. Ghosez, and J. Triscone, Annu. Rev. Condens. Matter Phys. 2, 141 (2011). 10.1146/annurev-conmatphys-062910-140445
2. A. Ohtomo and H. Y. Hwang, Nature 427, 423 (2004). 10.1038/nature02308
3. A. Brinkman, M. Huijben, M. van Zalk, J. Huijben, U. Zeitler, J. C. Maan, W. G. van der Wiel, G. Rijnders, D. H. A. Blank, and H. Hilgenkamp, Nature Mater. 6, 493 (2007). 10.1038/nmat1931
4. N. Reyren, S. Thiel, A. D. Caviglia, L. Fitting Kourkoutis, G. Hammerl, C. Richter, C. W. Schneider, T. Kopp, A.-S. Rüetschi, D. Jaccard, M. Gabay, D. A. Muller, J.-M. Triscone, and J. Mannhart, Science 317, 1196 (2007). 10.1126/science.1146006
5. A. Spinelli, M. A. Torija, C. Liu, C. Jan, and C. Leighton, Phys. Rev. B 81, 155110 (2010). 10.1103/PhysRevB.81.155110
6. K. G. Rana, V. Khikhlovskyi, and T. Banerjee, Appl. Phys. Lett. 100, 213502 (2012). 10.1063/1.4720516
7. X. Lou, C. Adelmann, M. Furis, S. A. Crooker, C. J. Palmstrøm, and P. A. Crowell, Phys. Rev. Lett. 96, 176603 (2006). 10.1103/PhysRevLett.96. 176603
8. M. Tran, H. Jaffrès, C. Deranlot, J.-M. George, A. Fert, A. Miard, and A. Lemaître, Phys. Rev. Lett. 102, 036601 (2009). 10.1103/PhysRevLett.102.036601
9. S. P. Dash, S. Sharma, R. S. Patel, M. P. de Jong, and R. Jansen, Nature 462, 491 (2009). 10.1038/nature08570
10. N. Reyren, M. Bibes, E. Lesne, J.-M. George, C. Deranlot, S. Collin, A. Barthélémy, and H. Jaffrès, Phys. Rev. Lett. 108, 186802 (2012). 10.1103/PhysRevLett.108.186802
11. W. Han, X. Jiang, A. Kajdos, S.-H. Yang, S. Stemmer, and S. S. P. Parkin, Nature Comm. 4, 2134 (2013). 10.1038/ncomms3134
12. S. M. Sze and K. K. Ng, Physics of Semiconductor Devices (Wiley, Hoboken, NJ, USA 2006).
13. G. Koster, B. L. Kropman, G. J. H. M. Rijnders, D. H. A. Blank, and H. Rogalla, Appl. Phys. Lett. 73, 2920 (1998). 10.1063/1.122630
14. R. Jansen, S. P. Dash, S. Sharma, and B. C. Min, Semicond. Sci. Technol. 27, 083001 (2012). 10.1088/0268-1242/27/8/083001
15. T. Fujii, M. Kawasaki, A. Sawa, Y. Kawazoe, H. Akoh, and Y. Tokura, Phys. Rev. B 75, 165101 (2007). 10.1103/PhysRevB.75.165101
16. T. Uhrmann, T. Dimopoulos, A. Kovacs, A. Kohn, S. Weyers, U. Paschen, J. Smoliner, and H. Brückl, J. Phys. D: Appl. Phys. 42, 145114 (2009). 10.1088/0022-3727/42/14/145114
17. B.-C. Min, J. C. Lodder, R. Jansen, and K. Motohashi, J. Appl. Phys. 99, 08S701 (2006). 10.1063/1.2176317
18. S. Suzuki, T. Yamamoto, H. Suzuki, K. Kawaguchi, and K. Takahashi, J. Appl. Phys. 81, 6830 (1997). 10.1063/1.365242
19. T. Susaki, Y. Kozuka, Y. Tateyama, and H. Y. Hwang, Phys. Rev. B 76, 155110 (2007). 10.1103/PhysRevB.76.155110
20. R. C. Neville, B. Hoeneisen, and C. A. Mead, J. Appl. Phys. 43, 2124 (1972). 10.1063/1.1661463
21. J. Shiogai, M. Ciorga, M. Utz, D. Schuh, M. Kohda, D. Bougeard, T. Nojima, J. Nitta, and D. Weiss, Phys. Rev. B 89, 081307-R (2014). 10.1103/PhysRevB.89.081307
22. A. Dankert, R. S. Dulal, and S. P. Dash, Sci. Rep. 3, 3196 (2013). 10.1038/srep03196
23. C. Şahin, G. Vignale, and M. E. Flatté, Phys. Rev. B 89, 155402 (2014). 10.1103/PhysRevB.89.155402
24. S. P. Dash, S. Sharma, J. C. Le Breton, J. Peiro, H. Jaffres, J.-M. George, A. Lemaître, and R. Jansen, Phys. Rev. B 84, 054410 (2011). 10.1103/PhysRevB.84.054410
25. S. Sharma, S. P. Dash, H. Saito, S. Yuasa, B. J. van Wees, and R. Jansen, Phys. Rev. B 86, 165308 (2012). 10.1103/PhysRevB.86.165308
26. H. Nakamura, T. Koga, and T. Kimura, Phys. Rev. Lett. 108, 206601 (2012). 10.1103/PhysRevLett.108.206601
27. T. Uemura, K. Kondo, J. Fujisawa, K. Matsuda, and M. Yamamoto, Appl. Phys. Lett. 101, 132411 (2012). 10.1063/1.4754545
28. S. Sharma, A. Spiesser, S. P. Dash, S. Iba, S. Watanabe, B. J. van Wees, H. Saito, S. Yuasa, and R. Jansen, Phys. Rev. B 89, 075301 (2014). 10.1103/PhysRevB.89.075301
29. O. Txoperena, M. Gobbi, A. Bedoya-Pinto, F. Golmar, X. Sun, L. E. Hueso, and F. Casanova, Appl. Phys. Lett. 102, 192406 (2013). 10.1063/1.4806987