SCOPUS 정보 검색 플랫폼

IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC

Volumn 2000-January, Issue , 2000, Pages 73-76

Defect engineering in MBE grown GaAs based materials

(9) Specht, P a Cich, M J a Zhao, R a Jager N D a Gebauer, J a Borner F b Krause Rehberg, R b Luysberg, M c Weber, E R a

a University of California Berkeley (United States)

b MARTIN LUTHER UNIVERSITY HALLE WITTENBERG (Germany)

c FORSCHUNGSZENTRUM JÜLICH (Germany)

Author keywords

Capacitive sensors; Doping; Electric breakdown; Electric resistance; Gallium arsenide; Materials science and technology; Molecular beam epitaxial growth; Temperature control; Temperature measurement; Thermal stability

Indexed keywords

CAPACITIVE SENSORS; DOPING (ADDITIVES); ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; EPILAYERS; GALLIUM ARSENIDE; GROWTH (MATERIALS); INSULATING MATERIALS; MOLECULAR BEAMS; POINT DEFECTS; SEMICONDUCTING GALLIUM; STABILITY; TEMPERATURE CONTROL; TEMPERATURE MEASUREMENT; THERMODYNAMIC STABILITY;

ANTI-SITE DEFECT; COMPLETE CONTROL; DEFECT ENGINEERING; DOPING CONCENTRATION; MATERIALS SCIENCE AND TECHNOLOGY; MOLECULAR BEAM EPITAXIAL GROWTH; NATIVE POINT DEFECTS; THERMAL STABILIZATION;

DEFECTS;

EID: 84950144259 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/SIM.2000.939200 Document Type: Conference Paper

Times cited : (1)

References (9)

1
- 0001205640
- M. Luysberg, H. Sohn, A. Prasad, P. Specht, Z. Liliental-Weber, E. R. Weber, J. Gebauer, and R. Krause-Rehberg, J. Appl. Phys. 83 (1998) 561
- (1998) J. Appl. Phys. , vol.83 , pp. 561
- Luysberg, M.¹ Sohn, H.² Prasad, A.³ Specht, P.⁴ Liliental-Weber, Z.⁵ Weber, E.R.⁶ Gebauer, J.⁷ Krause-Rehberg, R.⁸

2
- 0031343133
- P. Specht, S. Jeong, H. Sohn, M. Luysberg, A. Prasad, J. Gebauer, R. Krause-Rehberg, E. R. Weber, Mat. Sci. Forum 258-263 (1997) 951
- (1997) Mat. Sci. Forum , vol.258-263 , pp. 951
- Specht, P.¹ Jeong, S.² Sohn, H.³ Luysberg, M.⁴ Prasad, A.⁵ Gebauer, J.⁶ Krause-Rehberg, R.⁷ Weber, E.R.⁸

3
- 11944268367
- M. R. Melloch, J. M. Woodall, E. S. Harmon, N. Otsuka, F. H. Pollak, D. D. Nolte, R. M. Feenstra, M. A. Lutz, Ann. Rev. Mater. Sci. 25 (1995) 547
- (1995) Ann. Rev. Mater. Sci. , vol.25 , pp. 547
- Melloch, M.R.¹ Woodall, J.M.² Harmon, E.S.³ Otsuka, N.⁴ Pollak, F.H.⁵ Nolte, D.D.⁶ Feenstra, R.M.⁷ Lutz, M.A.⁸

4
- 0002977515
- D. E. Bliss, W. Walukiewicz, K. T. Chan, J. W. Agerm, S. Tanigawa, E. E. Haller, MRS Symp. Proc. 241 (1992) 93
- (1992) MRS Symp. Proc. , vol.241 , pp. 93
- Bliss, D.E.¹ Walukiewicz, W.² Chan, K.T.³ Agerm, J.W.⁴ Tanigawa, S.⁵ Haller, E.E.⁶

5
- 0007653164
- eds.: T. Marek, S. Malzer, P. Kiesel, Erlangen-Nuernberg
- P. Specht, R. Zhao, R. C. Lutz, E. R. Weber, in: Physik Mikrostrukturierter Halbleiter, eds.: T. Marek, S. Malzer, P. Kiesel, Erlangen-Nuernberg 1998, p. 15
- (1998) Physik Mikrostrukturierter Halbleiter , pp. 15
- Specht, P.¹ Zhao, R.² Lutz, R.C.³ Weber, E.R.⁴

6
- 0033314709
- M. J. Cich, R. C. Lutz, R. Zhao, P. Specht, E. R. Weber, MRS Symp. Proc. 570 (1999) 129
- (1999) MRS Symp. Proc. , vol.570 , pp. 129
- Cich, M.J.¹ Lutz, R.C.² Zhao, R.³ Specht, P.⁴ Weber, E.R.⁵

7
- 0027904651
- S. A. McQuaid, R. C. Newman, M. Missous, S. O'Hagan, J. Cryst. Growth 127 (1993) 515
- (1993) J. Cryst. Growth , vol.127 , pp. 515
- McQuaid, S.A.¹ Newman, R.C.² Missous, M.³ O'Hagan, S.⁴

8
- 0000713727
- J. Gebauer, F. Börner, R. Krause-Rehberg, T. E. M. Staab, W. Bauer-Kugelmann, G. Kögel, W. Triftshäuser, P. Specht, R. C. Lutz, E. R. Weber, M. Luysberg, J. Appl. Phys. 87 (2000) 8368
- (2000) J. Appl. Phys. , vol.87 , pp. 8368
- Gebauer, J.¹ Börner, F.² Krause-Rehberg, R.³ Staab, T.E.M.⁴ Bauer-Kugelmann, W.⁵ Kögel, G.⁶ Triftshäuser, W.⁷ Specht, P.⁸ Lutz, R.C.⁹ Weber, E.R.¹⁰ Luysberg, M.¹¹

9
- 0004237593
- rd edition Cambridge University Press, chap. 7.5
- rd edition (Cambridge University Press 1993), chap. 7.5
- (1993) Doping III-V Semiconductors
- Schubert, E.F.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.