Potassium Postdeposition Treatment-Induced Band Gap Widening at Cu(In,Ga)Se2 Surfaces - Reason for Performance Leap?

ACS Applied Materials and Interfaces

Volumn 7, Issue 49, 2015, Pages 27414-27420

  Handick, Evelyn ^a   Reinhard, Patrick ^b   Alsmeier, Jan Hendrik ^a   Köhler, Leonard ^a   Pianezzi, Fabian ^b   Krause, Stefan ^a,c   Gorgoi, Mihaela ^d   Ikenaga, Eiji ^e   Koch, Norbert ^a,c   Wilks, Regan G ^a   Buecheler, Stephan ^b   Tiwari, Ayodhya N ^b   Bär, Marcus ^a,f  

^a HAHN MEITNER INSTITUT   (Germany)

^b SWISS FEDERAL LABORATORIES FOR MATERIALS SCIENCE AND TECHNOLOGY   (Switzerland)

^c HUMBOLDT UNIVERSITY   (Germany)

^d Methods and Instrumentation for Synchrotron Radiation Research and   (United States)

^e SPring 8/JASRI ^*  (Japan)

^f BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

alkali fluoride postdeposition treatments; chalcopyrites; direct and inverse photoemission; surface band gap; thin film solar cells

Indexed keywords

CARRIER CONCENTRATION; COPPER; EFFICIENCY; ELECTRONIC STRUCTURE; FLUORINE COMPOUNDS; GALLIUM; PHOTOEMISSION; SEMICONDUCTING SELENIUM COMPOUNDS; THIN FILMS;

CHALCOPYRITES; INVERSE PHOTOEMISSION; POST DEPOSITION TREATMENT; SURFACE BANDS; THIN FILM SOLAR CELLS;

ENERGY GAP;

EID: 84950123489     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/acsami.5b09231     Document Type: Article

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