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Volumn 2001-January, Issue , 2001, Pages 42-47
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A study of formation and failure mechanism of CMP scratch induced defects on ILD in a W-damascene interconnect SRAM cell
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Author keywords
Abrasives; Chemical technology; Dielectric breakdown; Failure analysis; Life estimation; Planarization; Random access memory; Slurries; Stress; Testing
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Indexed keywords
ABRASIVES;
CHEMICAL ANALYSIS;
DEFECTS;
DIELECTRIC MATERIALS;
ELECTRIC BREAKDOWN;
ELECTRIC FIELDS;
FAILURE ANALYSIS;
INTEGRATED CIRCUIT INTERCONNECTS;
OUTAGES;
RANDOM ACCESS STORAGE;
RELIABILITY;
SLURRIES;
STATIC RANDOM ACCESS STORAGE;
STRESSES;
TESTING;
CHEMICAL TECHNOLOGIES;
ELECTRIC FIELD STRESS;
HIGH TEMPERATURE OPERATING LIVES;
LIFE ESTIMATION;
PLANARIZATION;
RANDOM ACCESS MEMORY;
RELIABILITY FAILURE;
TIME DEPENDENT DIELECTRIC BREAKDOWN;
FAILURE (MECHANICAL);
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EID: 84949748563
PISSN: 15417026
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/RELPHY.2001.922879 Document Type: Conference Paper |
Times cited : (12)
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References (4)
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