High rate deposition of microcrystalline silicon solar cells using 13.56 MhZ PECVD

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn 2000-January, Issue , 2000, Pages 150-153

  Roschek, Tobias ^a   Repmann, Tobias ^a   Müller, Joachim ^a   Rech, Bernd ^a   Wagner, Heribert ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; DEPOSITION; DEPOSITION RATES; MICROCRYSTALLINE SILICON; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; SOLAR CELLS; VAPOR DEPOSITION;

DEPOSITION PARAMETERS; HIGH DEPOSITION RATES; HIGH-QUALITY MATERIALS; PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITIONS (PECVD); SILANE CONCENTRATIONS; SINGLE JUNCTION SOLAR CELLS; SOLAR CELL EFFICIENCIES; SUBSTRATE TEMPERATURE;

SILICON SOLAR CELLS;

EID: 84949545663     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2000.915776     Document Type: Conference Paper

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