-
1
-
-
0020159599
-
Indirect plasma deposition of silicon dioxide
-
L.G. Meiners, Indirect plasma deposition of silicon dioxide, J. Vac. Sci. Technol. 21 (2) (1982) 655.
-
(1982)
J. Vac. Sci. Technol.
, vol.21
, Issue.2
, pp. 655
-
-
Meiners, L.G.1
-
2
-
-
84957272341
-
Plasma enhanced chemical vapor deposition: Differences between direct and remote plasma excitation
-
G. Lucovsky, D. V. Tsu, Plasma enhanced chemical vapor deposition: Differences between direct and remote plasma excitation, J. Vac. Sci. Technol. A 5 (4) (1987) 2231.
-
(1987)
J. Vac. Sci. Technol. A
, vol.5
, Issue.4
, pp. 2231
-
-
Lucovsky, G.1
Tsu, D.V.2
-
3
-
-
0027678218
-
Remote plasma-enhanced chemical vapour deposition with metal organic source gases: Principles and applications
-
W. Kulisch, Remote plasma-enhanced chemical vapour deposition with metal organic source gases: principles and applications, Surf. Coat. Technol. 59 (1993) 193.
-
(1993)
Surf. Coat. Technol.
, vol.59
, pp. 193
-
-
Kulisch, W.1
-
4
-
-
0003586634
-
Induction heated plasma assisted chemical vapor deposition of SiN
-
H. Mito, A. Sekiguchi, Induction heated plasma assisted chemical vapor deposition of SiN, J. Vac. Sci. Technol. A 4 (3) (1986) 475.
-
(1986)
J. Vac. Sci. Technol. A
, vol.4
, Issue.3
, pp. 475
-
-
Mito, H.1
Sekiguchi, A.2
-
5
-
-
0006631535
-
Remote plasma enhanced CVD deposition of silicon nitride and oxide for gate insulators in (In, Ga)As FET devices
-
P.D. Richard, R.J. Markunas, G. Lucovsky, G.G. Fountain, A.N. Mansour, D.V. Tsu, Remote plasma enhanced CVD deposition of silicon nitride and oxide for gate insulators in (In, Ga)As FET devices, J. Vac. Sci. Technol. A 3 (3) (1985) 867.
-
(1985)
J. Vac. Sci. Technol. A
, vol.3
, Issue.3
, pp. 867
-
-
Richard, P.D.1
Markunas, R.J.2
Lucovsky, G.3
Fountain, G.G.4
Mansour, A.N.5
Tsu, D.V.6
-
6
-
-
4243649097
-
Afterglow and decaying plasma CVD systems
-
L. Bárdoš, Afterglow and decaying plasma CVD systems, Vac. 38 (8)9)10) (1988) 637.
-
(1988)
Vac.
, vol.38
, Issue.8-10
, pp. 637
-
-
Bárdoš, L.1
-
7
-
-
0029375345
-
In situ characterization of the remote plasma technique
-
W. Kulisch, M. Schiller, S. Reinke, In situ characterization of the remote plasma technique, Surf. Coat. Technol. 7475 (1995) 455.
-
(1995)
Surf. Coat. Technol.
, vol.7475
, pp. 455
-
-
Kulisch, W.1
Schiller, M.2
Reinke, S.3
-
8
-
-
0003323061
-
Electrical probes
-
W. Lochte-Holtgreven (Ed.), North-Holland, Amsterdam
-
L. Schott, Electrical probes, in: W. Lochte-Holtgreven (Ed.), Plasma Diagnostics. North-Holland, Amsterdam, 1968.
-
(1968)
Plasma Diagnostics
-
-
Schott, L.1
-
10
-
-
0000528150
-
Ion bombardment in rf plasmas
-
J. Liu, G.L. Huppert, H.H. Swain, Ion bombardment in rf plasmas, J. Appl. Phys. 68 (8) (1990) 3916.
-
(1990)
J. Appl. Phys.
, vol.68
, Issue.8
, pp. 3916
-
-
Liu, J.1
Huppert, G.L.2
Swain, H.H.3
-
11
-
-
3943055339
-
Review of inductively coupled plasmas for plasma processing
-
J. Hopwood, Review of inductively coupled plasmas for plasma processing, Plasma Sources Sci. Technol. 1 (2) (1992) 109.
-
(1992)
Plasma Sources Sci. Technol.
, vol.1
, Issue.2
, pp. 109
-
-
Hopwood, J.1
-
12
-
-
0015663251
-
The inadequate reference electrode, a widespread source of error in plasma probe measurements
-
J.-S. Chang, The inadequate reference electrode, a widespread source of error in plasma probe measurements, J. Phys. D: Appl. Phys. 6 (1973) 1674.
-
(1973)
J. Phys. D: Appl. Phys.
, vol.6
, pp. 1674
-
-
Chang, J.-S.1
-
14
-
-
0026404942
-
Range of application for asymmetric double probes
-
H. Amemiya, G. Fuchs, Range of application for asymmetric double probes, Jpn. J. Appl. Phys. 30 (12A) (1991) 3531.
-
(1991)
Jpn. J. Appl. Phys.
, vol.30
, Issue.12 A
, pp. 3531
-
-
Amemiya, H.1
Fuchs, G.2
-
15
-
-
34250930966
-
Der niedervoltbogen
-
M.J. Druyvesteyn, Der Niedervoltbogen, Z. Physik 64 (1930) 781.
-
(1930)
Z. Physik
, vol.64
, pp. 781
-
-
Druyvesteyn, M.J.1
|