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Volumn 2002-January, Issue , 2002, Pages 105-110

Hot carrier reliability of N-LDMOS transistor arrays for power BiCMOS applications

Author keywords

BiCMOS integrated circuits; Bipolar transistors; Degradation; Driver circuits; Energy management; Hot carriers; Semiconductor optical amplifiers; Stress; Switches; Voltage

Indexed keywords

BIPOLAR TRANSISTORS; DEGRADATION; ELECTRIC POTENTIAL; ENERGY MANAGEMENT; HOT CARRIERS; LIGHT AMPLIFIERS; MOS DEVICES; OPTICAL SWITCHES; RELIABILITY; SEMICONDUCTOR OPTICAL AMPLIFIERS; STRESSES; SWITCHES;

EID: 84949201206     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2002.996617     Document Type: Conference Paper
Times cited : (8)

References (8)
  • 1
    • 0034448282 scopus 로고    scopus 로고
    • LDMOS Implementation in a 0.35 um BCD Technology (BCD6)
    • A. Moscatelli et. al., "LDMOS Implementation in a 0.35 um BCD Technology (BCD6)", ISPSD 2000, pp. 323-326
    • ISPSD 2000 , pp. 323-326
    • Moscatelli, A.1
  • 2
    • 0002271598 scopus 로고    scopus 로고
    • Complementary 25V LDMOS for Analog Applications Based on 0.6 um BiCMOS Technology
    • K. Nakamura et. al., "Complementary 25V LDMOS for Analog Applications Based on 0.6 um BiCMOS Technology", BCTM 2000, pp. 94-97
    • BCTM 2000 , pp. 94-97
    • Nakamura, K.1
  • 3
    • 0032665190 scopus 로고    scopus 로고
    • Experimental Study of Hot-Carrier Effects in LDMOS Transistors
    • R. Versari et. al., "Experimental Study of Hot-Carrier Effects in LDMOS Transistors", IEEE Trans. Electron Devices, ED-46, p 1228, 1999
    • (1999) IEEE Trans. Electron Devices , vol.ED-46 , pp. 1228
    • Versari, R.1
  • 5
    • 0033728126 scopus 로고    scopus 로고
    • Dealing with Hot-Carrier Aging in nMOS and DMOS, Models, Simulations and Characterizations
    • A. Mouthaan et. al., "Dealing with Hot-Carrier Aging in nMOS and DMOS, Models, Simulations and Characterizations", Microelectronics Reliability 2000, pp. 909-917
    • Microelectronics Reliability 2000 , pp. 909-917
    • Mouthaan, A.1
  • 6
    • 0033347298 scopus 로고    scopus 로고
    • Snapback and Safe Operating Area of LDMOS Transistors
    • P. Hower et. al., "Snapback and Safe Operating Area of LDMOS Transistors", IEDM 1999, pp. 193-196
    • IEDM 1999 , pp. 193-196
    • Hower, P.1
  • 7
    • 0024124856 scopus 로고
    • Consistent Model for Hot-Carrier Degradation in n-Channel and p-Channel MOSFET's
    • P. Heremans et. al., "Consistent Model for Hot-Carrier Degradation in n-Channel and p-Channel MOSFET's", IEEE Trans. Electron Devices, ED-35, p 2194-2209, 1988
    • (1988) IEEE Trans. Electron Devices , vol.ED-35 , pp. 2194-2209
    • Heremans, P.1
  • 8
    • 84945713471 scopus 로고
    • Hot-Electron-Induced MOSFET Degradation-Model, Monitor, and Improvement
    • C. Hu et. al., "Hot-Electron-Induced MOSFET Degradation-Model, Monitor, and Improvement", IEEE Trans. Electron Devices, ED-32, p 375, 1985
    • (1985) IEEE Trans. Electron Devices , vol.ED-32 , pp. 375
    • Hu, C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.