High thermoelectric performance realized in a bicuseo system by improving carrier mobility through 3D modulation doping

Journal of the American Chemical Society

Volumn 136, Issue 39, 2014, Pages 13902-13908

  Pei, Yan Ling ^a   Wu, Haijun ^b   Wu, Di ^b   Zheng, Fengshan ^b   He, Jiaqing ^b  

^a BEIHANG UNIVERSITY   (China)

^b SOUTHERN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC POWER FACTOR; MODULATION; THERMAL CONDUCTIVITY; THERMOELECTRICITY;

CHARGE CARRIERS TRANSPORT; DOPED SAMPLE; ELECTRICAL CONDUCTIVITY; HIGH POWER FACTOR; LOW THERMAL CONDUCTIVITY; MODULATION DOPING; MODULATION-DOPED; THERMOELECTRIC PERFORMANCE;

CARRIER MOBILITY;

BISMUTH; COPPER; OXYGEN; SELENIUM;

ARTICLE; CHEMICAL COMPOSITION; DIFFERENTIAL SCANNING CALORIMETRY; ELECTRIC CONDUCTIVITY; FILM; MODULATION; MODULATION DOPING; THERMAL CONDUCTIVITY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

EID: 84949115188     PISSN: 00027863     EISSN: 15205126     Source Type: Journal    
DOI: 10.1021/ja507945h     Document Type: Article

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