Thermoelectric properties of Mg doped p-type BiCuSeO oxyselenides

Journal of Alloys and Compounds

Volumn 551, Issue , 2013, Pages 649-653

  Li, Jing ^a   Sui, Jiehe ^a   Barreteau, Celine ^b   Berardan, David ^b   Dragoe, Nita ^b   Cai, Wei ^a   Pei, Yanling ^c   Zhao, Li Dong ^b  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

^b UNIVERSITÉ PARIS SUD   (France)

^c BEIHANG UNIVERSITY   (China)

Author keywords

BiCuSeO; Electrical conductivity; Seebeck coefficient; Thermal conductivity; Thermoelectric

Indexed keywords

BICUSEO; ELECTRICAL CONDUCTIVITY; HOLE CARRIERS; LAYER STRUCTURES; MG-DOPING; P-TYPE; THERMOELECTRIC; THERMOELECTRIC FIGURE OF MERIT; THERMOELECTRIC PROPERTIES;

ELECTRIC CONDUCTIVITY; HOLE CONCENTRATION; SEEBECK COEFFICIENT; THERMOELECTRIC EQUIPMENT;

THERMAL CONDUCTIVITY;

EID: 84870988874     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2012.10.160     Document Type: Article

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