Effect of Auger Recombination on Lasing in Heterostructured Quantum Dots with Engineered Core/Shell Interfaces

Nano Letters

Volumn 15, Issue 11, 2015, Pages 7319-7328

  Park, Young Shin ^a,b   Bae, Wan Ki ^c   Baker, Thomas ^a   Lim, Jaehoon ^a   Klimov, Victor I ^a  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF NEW MEXICO   (United States)

^c Korea Institute of Science and Technology   (South Korea)

Author keywords

Auger recombination; core shell heterostructure; lasing; optical gain; quantum dot; semiconductor nanocrystal

Indexed keywords

AUGERS; INTERFACE STATES; NANOCRYSTALS; OPTICAL GAIN; QUANTUM DOT LASERS;

AMPLIFIED SPONTANEOUS EMISSIONS; AUGER RECOMBINATION; CORE/SHELL; INTERFACE ENGINEERING; LASING; NANOCRYSTAL QUANTUM DOTS; OPTICAL AMPLIFICATIONS; SEMICONDUCTOR NANOCRYSTALS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84946924464     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/acs.nanolett.5b02595     Document Type: Article

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