Complementary Spintronic Logic With Spin Hall Effect-Driven Magnetic Tunnel Junction

IEEE Transactions on Magnetics

Volumn 51, Issue 11, 2015, Pages

  Kang, Wang ^a   Zheng, Chentian ^a   Zhang, Youguang ^a   Ravelosona, Dafiné ^b   Lv, Weifeng ^a   Zhao, Weisheng ^a,b  

^a BEIHANG UNIVERSITY   (China)

^b CNRS   (France)

Author keywords

Direct cascading; magnetic tunnel junction (MTJ); spin Hall effect (SHE); spintronic logic

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTATION THEORY; CRYSTAL SYMMETRY; LOGIC CIRCUITS; LOW POWER ELECTRONICS; MAGNETIC STORAGE; RANDOM ACCESS STORAGE; SPIN HALL EFFECT; TUNNEL JUNCTIONS;

CRITICAL PROBLEMS; DIRECT CASCADING; LOW-POWER COMPUTING; MAGNETIC RANDOM ACCESS MEMORY; MAGNETIC TUNNEL JUNCTION; SPIN TRANSFER TORQUE; SPINTRONIC DEVICE; SPINTRONIC LOGIC CIRCUITS;

COMPUTER CIRCUITS;

EID: 84946576867     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2015.2444437     Document Type: Article

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