메뉴 건너뛰기




Volumn 35, Issue 5, 2015, Pages 32-40

Nonvolatile Processor Architecture Exploration for Energy-Harvesting Applications

Author keywords

architecture; energy harvesting; nonvolatile processor

Indexed keywords

ARCHITECTURE; COMPUTER ARCHITECTURE; INTEGRATED CIRCUIT DESIGN; INTERNET OF THINGS;

EID: 84946564730     PISSN: 02721732     EISSN: None     Source Type: Journal    
DOI: 10.1109/MM.2015.88     Document Type: Article
Times cited : (63)

References (8)
  • 1
    • 84908233516 scopus 로고    scopus 로고
    • Ambient RF Energy-Harvesting Technologies for Self-Sustainable Standalone Wireless Sensor Platforms
    • S. Kimet al., "Ambient RF Energy-Harvesting Technologies for Self-Sustainable Standalone Wireless Sensor Platforms," Proc. IEEE, vol. 102, no. 11, 2014, pp. 1649-1666.
    • (2014) Proc. IEEE , vol.102 , Issue.11 , pp. 1649-1666
    • Kimet, Al. S.1
  • 3
    • 84934295282 scopus 로고    scopus 로고
    • Architecture exploration for ambient energy harvesting nonvolatile processors
    • K. Ma et al., "Architecture Exploration for Ambient Energy Harvesting Nonvolatile Processors," Proc. Int'l Symp. High-Performance Computer Architecture, 2015, pp. 526-537.
    • (2015) Proc. Int'l Symp. High-Performance Computer Architecture , pp. 526-537
    • Ma, K.1
  • 4
    • 0035273822 scopus 로고    scopus 로고
    • NV-SRAM: A nonvolatile SRAM with backup ferroelectric capacitors
    • T. Miwa et al., "NV-SRAM: A Nonvolatile SRAM with Backup Ferroelectric Capacitors," IEEE J. Solid-State Circuits, vol. 36, no. 3, 2001, pp. 522-527.
    • (2001) IEEE J. Solid-State Circuits , vol.36 , Issue.3 , pp. 522-527
    • Miwa, T.1
  • 5
    • 84870772612 scopus 로고    scopus 로고
    • A 3us Wake-up time nonvolatile processor based on ferroelectric flip-Flops
    • Y. Wang et al., "A 3us Wake-up Time Nonvolatile Processor Based on Ferroelectric Flip-Flops," Proc. 4th European Solid-State Circuits Conf., 2012, pp. 149-152.
    • (2012) Proc. 4th European Solid-State Circuits Conf. , pp. 149-152
    • Wang, Y.1
  • 6
    • 84940753775 scopus 로고    scopus 로고
    • 7.5 A 3.3 ns-Access-Time 71.2lW/MHz 1Mb Embedded sttmram using physically eliminated read-disturb scheme and normally-off memory architecture
    • H. Noguchi et al., "7.5 A 3.3 ns-Access-Time 71.2lW/MHz 1Mb Embedded STTMRAM Using Physically Eliminated Read-Disturb Scheme and Normally-Off Memory Architecture," Proc. IEEE Int'l Solid-State Circuits Conf., 2015, pp. 1-3.
    • (2015) Proc. IEEE Int'l Solid-State Circuits Conf. , pp. 1-3
    • Noguchi, H.1
  • 7
    • 77952185915 scopus 로고    scopus 로고
    • A 90nm 4Mb Embedded phase-change memory with 1.2 v 12ns read access time and 1MB/s Write throughput
    • G. De Sandre et al., "A 90nm 4Mb Embedded Phase-Change Memory with 1.2 V 12ns Read Access Time and 1MB/s Write Throughput," Proc. IEEE Int'l Solid-State Circuits Conf., 2010, pp. 268-269.
    • (2010) Proc. IEEE Int'l Solid-State Circuits Conf. , pp. 268-269
    • De Sandre, G.1
  • 8
    • 84898075711 scopus 로고    scopus 로고
    • 19.4 Embedded 1Mb ReRAM in 28nm CMOS with 0.27-to-1V Read using swing-Sample-and-couple sense amplifier and Self-Boost-Write-Termination scheme
    • M.-F. Chang et al., "19.4 Embedded 1Mb ReRAM in 28nm CMOS with 0.27-to-1V Read Using Swing-Sample-and-Couple Sense Amplifier and Self-Boost-Write-Termination Scheme," Proc. IEEE Int'l Solid-State Circuits Conf., 2014, pp. 332-333.
    • (2014) Proc. IEEE Int'l Solid-State Circuits Conf. , pp. 332-333
    • Chang, M.-F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.