Ge-incorporated Cu2ZnSnSe4 thin-film solar cells with efficiency greater than 10%

Solar Energy Materials and Solar Cells

Volumn 144, Issue , 2016, Pages 488-492

  Kim, Shinho ^a   Kim, Kang Min ^a   Tampo, Hitoshi ^a   Shibata, Hajime ^a   Matsubara, Koji ^a   Niki, Shigeru ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

CZTGSe; CZTSe; Ge incorporation; Kesterite; Thin film solar cell

Indexed keywords

COPPER; EFFICIENCY; ENERGY GAP; FILM PREPARATION; FILMS; GERMANIUM; OPEN CIRCUIT VOLTAGE; SEMICONDUCTING SELENIUM COMPOUNDS; SOLAR CELLS;

ANNEALING ENVIRONMENT; CZTGSE; CZTSE; DEVICE PROPERTIES; HIGH-EFFICIENCY; KESTERITES; THIN FILM SOLAR CELLS; TWO-STEP PROCESS;

THIN FILMS;

EID: 84945242784     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2015.09.039     Document Type: Article

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