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Materials Letters

Volumn 158, Issue , 2015, Pages 205-207

Narrow-bandgap Cu2Sn1-xGexSe3 thin film solar cells

(6) Kim, Kang Min a Kim, Shinho a Tampo, Hitoshi a Shibata, Hajime a Matsubara, Koji a Niki, Shigeru a

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

Author keywords

Copper tin selenide; Germanium incorporation; Narrow bandgap; Thin film solar cells

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; COPPER COMPOUNDS; ENERGY GAP; GERMANIUM COMPOUNDS; LAYERED SEMICONDUCTORS; MULTI-JUNCTION SOLAR CELLS; SELENIUM COMPOUNDS; SOLAR CELLS; THIN FILMS; TIN COMPOUNDS;

BOTTOM CELLS; CO-EVAPORATIONS; CU2SNSE3; FILM MORPHOLOGY; GRAIN SIZE; NARROW BAND GAP; POST ANNEALING TREATMENT; TIN SELENIDES;

THIN FILM SOLAR CELLS;

EID: 84931270924 PISSN: 0167577X EISSN: 18734979 Source Type: Journal
DOI: 10.1016/j.matlet.2015.05.153 Document Type: Article

Times cited : (21)

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