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Volumn 355, Issue , 2015, Pages 939-958

Tungsten-based nanomaterials (WO 3 & Bi 2 WO 6 ): Modifications related to charge carrier transfer mechanisms and photocatalytic applications

Author keywords

Bi 2 WO 6; Coupled semiconductors; Impurity doping; Noble metal deposition; Photocatalysis; WO 3

Indexed keywords

CHARGE CARRIERS; DEGRADATION; DEPOSITION; ELECTRONIC PROPERTIES; ENERGY GAP; NANOSTRUCTURED MATERIALS; PHOTOCATALYSIS; PRECIOUS METALS; SEMICONDUCTOR DOPING; SURFACE TREATMENT; TITANIUM DIOXIDE; TUNGSTEN; TUNGSTEN COMPOUNDS; WIDE BAND GAP SEMICONDUCTORS;

EID: 84944326707     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2015.07.003     Document Type: Article
Times cited : (244)

References (278)
  • 171
    • 79960783371 scopus 로고    scopus 로고
    • D. Bi, and Y. Xu Langmuir 27 2011 9359 9366
    • (2011) Langmuir , vol.27 , pp. 9359-9366
    • Bi, D.1    Xu, Y.2
  • 212


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.