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Volumn 160-161, Issue 1, 2014, Pages 383-389

Construction of Bi2WO6 homojunction via QDs self-decoration and its improved separation efficiency of charge carriers and photocatalytic ability

Author keywords

Charge separation behavior; Crystal growth mechanism; Homojunction; Photodegradation mechanism; QDs self decoration

Indexed keywords

QUANTUM ELECTRONICS;

EID: 84902131464     PISSN: 09263373     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apcatb.2014.05.041     Document Type: Article
Times cited : (88)

References (59)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.