Linewidth-narrowing due to 193 nm resist deformation during etch of spin-on low-k dielectrics

Proceedings of the IEEE 2003 International Interconnect Technology Conference, IITC 2003

Volumn , Issue , 2003, Pages 150-152

  Furukawa, Y ^a   Wolters, R ^a   Patz, M ^b  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b JSR CORPORATION   (Japan)

Author keywords

Argon; Dielectric constant; Dielectric materials; Dry etching; Lithography; Plasma applications; Plasma chemistry; Plasma sources; Polymers; Resists

Indexed keywords

ARGON; DEFORMATION; DIELECTRIC MATERIALS; INTEGRATED CIRCUIT INTERCONNECTS; ION BOMBARDMENT; LINEWIDTH; LITHOGRAPHY; PERMITTIVITY; PLASMA APPLICATIONS; PLASMA SOURCES; POLYMERS;

193 NM RESIST; DRY ETCH PROCESS; LINEWIDTH NARROWING; LOW K DIELECTRICS; PLASMA CHEMISTRIES; PLASMA IGNITION; RESISTS; SINGLE DAMASCENE;

DRY ETCHING;

EID: 84944076316     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2003.1219738     Document Type: Conference Paper

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