Analysis of resistivity in nano-interconnect: Full range (4.2-300 K) temperature characterization

Proceedings of the IEEE 2003 International Interconnect Technology Conference, IITC 2003

Volumn , Issue , 2003, Pages 132-134

  Guillaumond, J F ^a,b   Arnaud, L ^a   Mourier, T ^a   Fayolle, M ^a   Pesci, O ^a   Reimbold, G ^a  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

Author keywords

Conductivity; Copper; Data analysis; Electrical resistance measurement; Electronic mail; Electrons; Grain boundaries; MOCVD; Scattering parameters; Temperature distribution

Indexed keywords

COPPER; DATA REDUCTION; ELECTRIC CONDUCTIVITY; ELECTRON SCATTERING; ELECTRONIC MAIL; ELECTRONS; GRAIN BOUNDARIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SCATTERING PARAMETERS; TEMPERATURE DISTRIBUTION;

ANALYSIS OF RESISTIVITY; DAMASCENE COPPER LINES; ELECTRICAL RESISTANCE MEASUREMENT; FEATURE SIZES; NANO-INTERCONNECT; SCATTERING MECHANISMS; SUB-100 NM; TEMPERATURE CHARACTERIZATION;

INTEGRATED CIRCUIT INTERCONNECTS;

EID: 84944058305     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2003.1219733     Document Type: Conference Paper

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