Paving the way for full-fluid IC metallization using supercritical carbon dioxide

Proceedings of the IEEE 2003 International Interconnect Technology Conference, IITC 2003

Volumn , Issue , 2003, Pages 141-143

  Kondoh, E ^a   Vezin, V ^b   Shigama, K ^a   Sunada, S ^a   Kubo, K ^b   Ohta, T ^b  

^a UNIVERSITY OF YAMANASHI   (Japan)

^b TOKYO ELECTRON LTD   (Japan)

Author keywords

Carbon dioxide; Copper; Electrons; Filling; Hydrogen; Inductors; Metallization; Solvents; Sputtering; Temperature dependence

Indexed keywords

ASPECT RATIO; CARBON DIOXIDE; COPPER; DEPOSITION; ELECTRIC INDUCTORS; ELECTRONS; FILLING; HYDROGEN; METALLIZING; METALS; SOLVENTS; SPUTTERING; SUPERCRITICAL FLUID EXTRACTION; TEMPERATURE; TEMPERATURE DISTRIBUTION;

BARRIER METAL DEPOSITION; HIGH ASPECT RATIO; LOW-TEMPERATURE DEPOSITION; METAL THIN FILM; PREFERENTIAL GROWTH; SOLID PRECURSORS; SUPERCRITICAL CARBON DIOXIDES; TEMPERATURE DEPENDENCE;

INTEGRATED CIRCUIT INTERCONNECTS;

EID: 84944057968     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2003.1219736     Document Type: Conference Paper

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