Effects of passivation layer on stress relaxation in Cu line structures

Proceedings of the IEEE 2003 International Interconnect Technology Conference, IITC 2003

Volumn , Issue , 2003, Pages 180-182

  Gan, Dongwen ^a   Yoon, Sean ^a   Ho, P S ^a   Cresta, P ^b   Singh, N ^b   Bower, A F ^b   Leu, Jihperng ^c   Shankar, S ^c  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b Brown University   (United States)

^c INTEL CORPORATION   (United States)

Author keywords

Bonding; Chemistry; Equations; Kinetic theory; Passivation; Silicon carbide; Stress measurement; Substrates; Thermal stresses; X ray diffraction

Indexed keywords

BONDING; CHEMICAL BONDS; CHEMISTRY; INTEGRATED CIRCUIT INTERCONNECTS; KINETIC THEORY; SILICON CARBIDE; STRESS MEASUREMENT; STRESS RELAXATION; SUBSTRATES; THERMAL STRESS; X RAY DIFFRACTION;

CU DAMASCENE; CU LINES; DIFFUSION PATHS; EQUATIONS; KINETIC MODELING; PASSIVATION LAYER; STRESS RELAXATION BEHAVIOR;

PASSIVATION;

EID: 84944048658     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2003.1219748     Document Type: Conference Paper

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